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Heterostructures incorporated in one-dimensional semiconductor materials and devices

Thelander, Claes LU ; Björk, Mikael LU ; Persson, Ann LU ; Ohlsson, BJ; Sass, T; Wallenberg, Reine LU and Samuelson, Lars LU (2003) In Physics and Semiconductors 2002 : Proceedings of the 26th International Conference on the Physics of Semiconductors 171. p.253-260
Abstract
As an alternative to traditional top-down techniques for fabrication of one-dimensional devices we here report an approach wherein a bottom-up technique is used to create one-dimensional device structures. We use the vapor-liquid-solid growth method, in which a catalytically active gold nanoparticle forms a eutectic alloy with the nanowire constituents. Our method of growth allows atomically abrupt interfaces between different III-V semiconductors, also for highly mismatched combinations for which conventional growth techniques can not be used. Special emphasis is put on the processing of ohmic contacts to nanowires. We describe the transport properties of nanowires containing heterostructures from which band off-sets between two different... (More)
As an alternative to traditional top-down techniques for fabrication of one-dimensional devices we here report an approach wherein a bottom-up technique is used to create one-dimensional device structures. We use the vapor-liquid-solid growth method, in which a catalytically active gold nanoparticle forms a eutectic alloy with the nanowire constituents. Our method of growth allows atomically abrupt interfaces between different III-V semiconductors, also for highly mismatched combinations for which conventional growth techniques can not be used. Special emphasis is put on the processing of ohmic contacts to nanowires. We describe the transport properties of nanowires containing heterostructures from which band off-sets between two different binary materials are determined. Finally, we report the creation of double-barrier resonant tunneling diodes in which a single InAs quantum dot surrounded by InP tunnel barriers acts as the active element in the device, resulting in energetically sharp resonant tunneling peaks reflecting tunneling into zero-dimensional states of the quantum dot. (Less)
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
Physics and Semiconductors 2002 : Proceedings of the 26th International Conference on the Physics of Semiconductors
volume
171
pages
253 - 260
publisher
Inst of Physics Pub Inc
external identifiers
  • WOS:000222945600030
  • Scopus:4944226163
ISBN
0750309245
language
English
LU publication?
yes
id
c030200e-4ea6-49d7-b9d0-2aff8632dd4f (old id 529967)
alternative location
http://bookweb.kinokuniya.co.jp/htmy/0750309245.html
date added to LUP
2007-09-26 15:13:42
date last changed
2016-10-13 04:37:29
@misc{c030200e-4ea6-49d7-b9d0-2aff8632dd4f,
  abstract     = {As an alternative to traditional top-down techniques for fabrication of one-dimensional devices we here report an approach wherein a bottom-up technique is used to create one-dimensional device structures. We use the vapor-liquid-solid growth method, in which a catalytically active gold nanoparticle forms a eutectic alloy with the nanowire constituents. Our method of growth allows atomically abrupt interfaces between different III-V semiconductors, also for highly mismatched combinations for which conventional growth techniques can not be used. Special emphasis is put on the processing of ohmic contacts to nanowires. We describe the transport properties of nanowires containing heterostructures from which band off-sets between two different binary materials are determined. Finally, we report the creation of double-barrier resonant tunneling diodes in which a single InAs quantum dot surrounded by InP tunnel barriers acts as the active element in the device, resulting in energetically sharp resonant tunneling peaks reflecting tunneling into zero-dimensional states of the quantum dot.},
  author       = {Thelander, Claes and Björk, Mikael and Persson, Ann and Ohlsson, BJ and Sass, T and Wallenberg, Reine and Samuelson, Lars},
  isbn         = {0750309245},
  language     = {eng},
  pages        = {253--260},
  publisher    = {ARRAY(0xb159e50)},
  series       = {Physics and Semiconductors 2002 : Proceedings of the 26th International Conference on the Physics of Semiconductors},
  title        = {Heterostructures incorporated in one-dimensional semiconductor materials and devices},
  volume       = {171},
  year         = {2003},
}