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Optically detected extended X-ray absorption fine structure study of InGaN/GaN single quantum wells

Rigopoulos, N. ; Hamilton, B. ; Davies, G. J. ; Towlson, B. M. ; Poolton, N. R J ; Dawson, P. ; Graham, D. M. ; Kappers, M. J. ; Humphreys, C. J. and Carlson, S. LU (2007) 28th International Conference on the Physics of Semiconductors, ICPS 2006 893. p.1503-1504
Abstract

We have investigated the local atomic environment of the Ga atoms in an InxGa1-xN single quantum well structure using Optically Detected Extended X-ray Absorption Fine Structure (OD-EXAFS). A comparison of the OD-EXAFS data with a theoretical model shows the technique to be site selective for this particular structure and reveals that the quantum well emission originates from regions with x=0.15.

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author
; ; ; ; ; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
keywords
EXAFS, InGaN, Quantum well
host publication
AIP Conference Proceedings
volume
893
pages
2 pages
conference name
28th International Conference on the Physics of Semiconductors, ICPS 2006
conference location
Vienna, Austria
conference dates
2006-07-24 - 2006-07-28
external identifiers
  • scopus:77958508505
ISBN
9780735403970
DOI
10.1063/1.2730478
language
English
LU publication?
yes
id
53d33ccf-1a98-4209-89d1-114d8cef0c12
date added to LUP
2016-05-04 13:30:28
date last changed
2022-01-30 03:11:11
@inproceedings{53d33ccf-1a98-4209-89d1-114d8cef0c12,
  abstract     = {{<p>We have investigated the local atomic environment of the Ga atoms in an In<sub>x</sub>Ga<sub>1-x</sub>N single quantum well structure using Optically Detected Extended X-ray Absorption Fine Structure (OD-EXAFS). A comparison of the OD-EXAFS data with a theoretical model shows the technique to be site selective for this particular structure and reveals that the quantum well emission originates from regions with x=0.15.</p>}},
  author       = {{Rigopoulos, N. and Hamilton, B. and Davies, G. J. and Towlson, B. M. and Poolton, N. R J and Dawson, P. and Graham, D. M. and Kappers, M. J. and Humphreys, C. J. and Carlson, S.}},
  booktitle    = {{AIP Conference Proceedings}},
  isbn         = {{9780735403970}},
  keywords     = {{EXAFS; InGaN; Quantum well}},
  language     = {{eng}},
  pages        = {{1503--1504}},
  title        = {{Optically detected extended X-ray absorption fine structure study of InGaN/GaN single quantum wells}},
  url          = {{http://dx.doi.org/10.1063/1.2730478}},
  doi          = {{10.1063/1.2730478}},
  volume       = {{893}},
  year         = {{2007}},
}