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Site-controlled Ge quantum dot growth on Si by the use of electron beam pre-patterning

Borgström, Magnus LU ; Zela, Vilma LU ; Seifert, Werner LU and Samuelson, Lars LU (2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) In 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Abstract
By growth of Si on substrates that have been pre-patterned by electron-beam induced carbon nano-growth masks, nano-holes form at the Si surface. We have grown self-assembled Ge quantum dots in these holes by ultra high vacuum chemical vapour phase deposition (UHV-CVD). We usually find four dots in each hole. By varying the amount of deposited Ge, we can obtain either four dome-shaped or four pyramid-shaped dots in the majority of holes. These dot arrangements could be used for the realisation of the simplest functional cell for quantum-dot cellular automata (QCA)
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
site controlled Ge quantum dot growth, Si substrate, Si, electron beam prepatterning, self assembly, ultra high vacuum chemical vapour phase deposition, carbon nanogrowth masks, four pyramid shaped dots, dome shaped dots, simplest functional cell, Ge, quantum dot cellular automata
in
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
pages
2 pages
publisher
Lund University
conference name
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
language
English
LU publication?
yes
id
8a8cf8db-a44c-41d6-8e53-8c0451f53b74 (old id 610439)
date added to LUP
2007-11-27 10:43:45
date last changed
2016-04-16 10:33:22
@misc{8a8cf8db-a44c-41d6-8e53-8c0451f53b74,
  abstract     = {By growth of Si on substrates that have been pre-patterned by electron-beam induced carbon nano-growth masks, nano-holes form at the Si surface. We have grown self-assembled Ge quantum dots in these holes by ultra high vacuum chemical vapour phase deposition (UHV-CVD). We usually find four dots in each hole. By varying the amount of deposited Ge, we can obtain either four dome-shaped or four pyramid-shaped dots in the majority of holes. These dot arrangements could be used for the realisation of the simplest functional cell for quantum-dot cellular automata (QCA)},
  author       = {Borgström, Magnus and Zela, Vilma and Seifert, Werner and Samuelson, Lars},
  keyword      = {site controlled Ge quantum dot growth,Si substrate,Si,electron beam prepatterning,self assembly,ultra high vacuum chemical vapour phase deposition,carbon nanogrowth masks,four pyramid shaped dots,dome shaped dots,simplest functional cell,Ge,quantum dot cellular automata},
  language     = {eng},
  pages        = {2},
  publisher    = {ARRAY(0xb7fb0a8)},
  series       = {7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science},
  title        = {Site-controlled Ge quantum dot growth on Si by the use of electron beam pre-patterning},
  year         = {2002},
}