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Structural properties of LT-GaAs(100) and GaMnAs(100) surfaces studied by scanning tunneling microscopy

Mikkelsen, Anders LU ; Gustafson, Johan LU ; Sadowski, Janusz LU and Lundgren, Edvin LU (2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) In 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Abstract
GaAs and GaMnAs compounds grown by low temperature (LT) molecular beam epitaxy (MBE), are promising materials for fabricating novel devices. LT-GaAs has already been used in new devices, as it has subpicosecond carrier lifetimes, good carrier mobility and high dark resistivity. GaMnAs compounds are candidates for integrating ferromagnetic materials into semiconductor devices, as they can become ferromagnetic at around 110 K. We have studied the surface structure of As capped MBE grown LT-GaAs(100) and GaMnAs(100) surfaces as a function of annealing temperature by Scanning Tunneling Microscopy (STM). On LT-GaAs(100) we find an ordered 2×4 phase at 400 C and an ordered 4×6 phase at 600 C. These phases have some similarities with the phases... (More)
GaAs and GaMnAs compounds grown by low temperature (LT) molecular beam epitaxy (MBE), are promising materials for fabricating novel devices. LT-GaAs has already been used in new devices, as it has subpicosecond carrier lifetimes, good carrier mobility and high dark resistivity. GaMnAs compounds are candidates for integrating ferromagnetic materials into semiconductor devices, as they can become ferromagnetic at around 110 K. We have studied the surface structure of As capped MBE grown LT-GaAs(100) and GaMnAs(100) surfaces as a function of annealing temperature by Scanning Tunneling Microscopy (STM). On LT-GaAs(100) we find an ordered 2×4 phase at 400 C and an ordered 4×6 phase at 600 C. These phases have some similarities with the phases found on ordinary GaAs (100). For GaMnAs (100) we identify a new 4×6 phase after annealing to 600 C, which is observed to be different in morphology and structure from the 4×6 ordered phases found on GaAs(100) (Less)
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
110 K, 600 degC, 400 degC, morphology, annealing temperature, GaMnAs(100) surfaces, structural properties, scanning tunneling microscopy, GaMnAs compounds, low temperature molecular beam epitaxy, subpicosecond carrier lifetimes, GaMnAs, carrier mobility, dark resistivity, ferromagnetic materials, As capped MBE grown LT-GaAs(100), semiconductor devices
in
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
pages
2 pages
publisher
Lund University
conference name
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
language
English
LU publication?
yes
id
91d57ada-4be2-4567-a08c-40c4cd22a0d8 (old id 610694)
date added to LUP
2007-11-28 11:30:58
date last changed
2016-04-16 08:29:42
@misc{91d57ada-4be2-4567-a08c-40c4cd22a0d8,
  abstract     = {GaAs and GaMnAs compounds grown by low temperature (LT) molecular beam epitaxy (MBE), are promising materials for fabricating novel devices. LT-GaAs has already been used in new devices, as it has subpicosecond carrier lifetimes, good carrier mobility and high dark resistivity. GaMnAs compounds are candidates for integrating ferromagnetic materials into semiconductor devices, as they can become ferromagnetic at around 110 K. We have studied the surface structure of As capped MBE grown LT-GaAs(100) and GaMnAs(100) surfaces as a function of annealing temperature by Scanning Tunneling Microscopy (STM). On LT-GaAs(100) we find an ordered 2×4 phase at 400 C and an ordered 4×6 phase at 600 C. These phases have some similarities with the phases found on ordinary GaAs (100). For GaMnAs (100) we identify a new 4×6 phase after annealing to 600 C, which is observed to be different in morphology and structure from the 4×6 ordered phases found on GaAs(100)},
  author       = {Mikkelsen, Anders and Gustafson, Johan and Sadowski, Janusz and Lundgren, Edvin},
  keyword      = {110 K,600 degC,400 degC,morphology,annealing temperature,GaMnAs(100) surfaces,structural properties,scanning tunneling microscopy,GaMnAs compounds,low temperature molecular beam epitaxy,subpicosecond carrier lifetimes,GaMnAs,carrier mobility,dark resistivity,ferromagnetic materials,As capped MBE grown LT-GaAs(100),semiconductor devices},
  language     = {eng},
  pages        = {2},
  publisher    = {ARRAY(0x8e0f888)},
  series       = {7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science},
  title        = {Structural properties of LT-GaAs(100) and GaMnAs(100) surfaces studied by scanning tunneling microscopy},
  year         = {2002},
}