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Electron accumulation in small and larger semiconductor quantum dots

Persson, Jonas LU ; Holm, Magnus LU ; Hessman, Dan LU ; Pistol, Mats-Erik LU ; Pryor, C. and Samuelson, Lars LU (2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) In 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Abstract
We present μ-PL and k·p calculations of self-assembled InP quantum dots (QDs) in GaInP. The QDs come in two subsets; the larger are pyramid shaped, and about 15 nm high with a base of about 40 by 50 nm, and the smaller have similar lateral extension but with a considerably lesser height. The change in size is accompanied by a change in quantum confinement and thus a change in emission energy. Moreover, there is a transition from a single sharp emission peak for the smallest dots to several 1 meV broad lines over a 50 meV range for the largest dots due to unintentional doping in the barrier material. The result is an electron accumulation in the QDs, and emission in an energy range corresponding to the energy range occupied by these... (More)
We present μ-PL and k·p calculations of self-assembled InP quantum dots (QDs) in GaInP. The QDs come in two subsets; the larger are pyramid shaped, and about 15 nm high with a base of about 40 by 50 nm, and the smaller have similar lateral extension but with a considerably lesser height. The change in size is accompanied by a change in quantum confinement and thus a change in emission energy. Moreover, there is a transition from a single sharp emission peak for the smallest dots to several 1 meV broad lines over a 50 meV range for the largest dots due to unintentional doping in the barrier material. The result is an electron accumulation in the QDs, and emission in an energy range corresponding to the energy range occupied by these electrons. Larger QDs accumulate more electrons and thus emit over a larger energy range. For the smaller dots we show that the precise position of the electronic ground state with respect to the Fermi level determines whether the dot is neutral or charged (Less)
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
energy range, electronic ground state, InP-InGaP, 50 meV, 1 meV, 15 nm, semiconductor quantum dots, electron accumulation, PL, k.p calculations, Fermi level, self assembled InP quantum dots, quantum confinement, emission energy, single sharp emission peak, barrier material, unintentional doping
in
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
pages
2 pages
publisher
Lund University
conference name
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
language
English
LU publication?
yes
id
5fe3a2a2-10ad-446f-a8f3-1f42d1d0d9c9 (old id 610704)
date added to LUP
2007-11-28 13:40:01
date last changed
2016-04-16 09:46:32
@misc{5fe3a2a2-10ad-446f-a8f3-1f42d1d0d9c9,
  abstract     = {We present μ-PL and k·p calculations of self-assembled InP quantum dots (QDs) in GaInP. The QDs come in two subsets; the larger are pyramid shaped, and about 15 nm high with a base of about 40 by 50 nm, and the smaller have similar lateral extension but with a considerably lesser height. The change in size is accompanied by a change in quantum confinement and thus a change in emission energy. Moreover, there is a transition from a single sharp emission peak for the smallest dots to several 1 meV broad lines over a 50 meV range for the largest dots due to unintentional doping in the barrier material. The result is an electron accumulation in the QDs, and emission in an energy range corresponding to the energy range occupied by these electrons. Larger QDs accumulate more electrons and thus emit over a larger energy range. For the smaller dots we show that the precise position of the electronic ground state with respect to the Fermi level determines whether the dot is neutral or charged},
  author       = {Persson, Jonas and Holm, Magnus and Hessman, Dan and Pistol, Mats-Erik and Pryor, C. and Samuelson, Lars},
  keyword      = {energy range,electronic ground state,InP-InGaP,50 meV,1 meV,15 nm,semiconductor quantum dots,electron accumulation,PL,k.p calculations,Fermi level,self assembled InP quantum dots,quantum confinement,emission energy,single sharp emission peak,barrier material,unintentional doping},
  language     = {eng},
  pages        = {2},
  publisher    = {ARRAY(0x9597a60)},
  series       = {7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science},
  title        = {Electron accumulation in small and larger semiconductor quantum dots},
  year         = {2002},
}