Advanced

Quantum behavior as well as room-temperature and 50 GHz operations of novel nonlinear devices and nanomaterials

Song, Aimin LU ; Shorubalko, Ivan LU ; Löfgren, Anneli LU ; Seifert, Werner LU ; Zirath, H.; Omling, Pär LU and Samuelson, Lars LU (2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) In 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Abstract
Novel nano-rectifiers based on ballistic electron transport have been fabricated from a high electron-mobility InGaAs/InP wafer. Because of the sufficiently small device size, operations at room temperature are achieved. Furthermore, the devices are shown to work not only up to at least 50 GHz but also with sensitivity to microwave reaching that of the commercial microwave diodes. Based on a similar microscopic mechanism, we have also constructed, to our knowledge, the first artificial electronic nanomaterial that operates at room temperature. Promising possibilities for practical applications, such as microwave detection and second-harmonic generation, are discussed. While the rectifying effect can be well described in the picture of... (More)
Novel nano-rectifiers based on ballistic electron transport have been fabricated from a high electron-mobility InGaAs/InP wafer. Because of the sufficiently small device size, operations at room temperature are achieved. Furthermore, the devices are shown to work not only up to at least 50 GHz but also with sensitivity to microwave reaching that of the commercial microwave diodes. Based on a similar microscopic mechanism, we have also constructed, to our knowledge, the first artificial electronic nanomaterial that operates at room temperature. Promising possibilities for practical applications, such as microwave detection and second-harmonic generation, are discussed. While the rectifying effect can be well described in the picture of classical ballistic transport, the pronounced output voltage reversal observed at low temperatures strongly suggests that quantum effect may become completely dominant (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
InGaAs-InP, 293 to 298 K, 50 GHz, second harmonic generation, voltage reversal, quantum effect, microwave detection, electronic nanomaterial, microwave diodes, device size, electron mobility InGaAs/InP wafer, ballistic electron transport, nanorectifiers, nanomaterials, nonlinear devices, quantum properties, room temperature
in
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
pages
2 pages
publisher
Lund University
conference name
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
language
English
LU publication?
yes
id
ece65869-6faa-47c6-bf5c-3b9bf33c25ec (old id 610797)
date added to LUP
2007-11-29 09:33:24
date last changed
2016-04-16 07:53:16
@misc{ece65869-6faa-47c6-bf5c-3b9bf33c25ec,
  abstract     = {Novel nano-rectifiers based on ballistic electron transport have been fabricated from a high electron-mobility InGaAs/InP wafer. Because of the sufficiently small device size, operations at room temperature are achieved. Furthermore, the devices are shown to work not only up to at least 50 GHz but also with sensitivity to microwave reaching that of the commercial microwave diodes. Based on a similar microscopic mechanism, we have also constructed, to our knowledge, the first artificial electronic nanomaterial that operates at room temperature. Promising possibilities for practical applications, such as microwave detection and second-harmonic generation, are discussed. While the rectifying effect can be well described in the picture of classical ballistic transport, the pronounced output voltage reversal observed at low temperatures strongly suggests that quantum effect may become completely dominant},
  author       = {Song, Aimin and Shorubalko, Ivan and Löfgren, Anneli and Seifert, Werner and Zirath, H. and Omling, Pär and Samuelson, Lars},
  keyword      = {InGaAs-InP,293 to 298 K,50 GHz,second harmonic generation,voltage reversal,quantum effect,microwave detection,electronic nanomaterial,microwave diodes,device size,electron mobility InGaAs/InP wafer,ballistic electron transport,nanorectifiers,nanomaterials,nonlinear devices,quantum properties,room temperature},
  language     = {eng},
  pages        = {2},
  publisher    = {ARRAY(0xb61e700)},
  series       = {7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science},
  title        = {Quantum behavior as well as room-temperature and 50 GHz operations of novel nonlinear devices and nanomaterials},
  year         = {2002},
}