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Low power 0.18μm CMOS dual-band front-end

Phansathitwong, Kittichai LU and Sjöland, Henrik LU (2005) 2005 IEEE Asian Solid-State Circuits Conference In 2005 IEEE Asian Solid-State Circuits Conference p.81-84
Abstract
A dual-band CMOS front-end was designed and fabricated in a 0.18 μm CMOS process. The front-end employs a common-gate low noise amplifier (LNA) with capacitive cross coupling (CCC) technique and a passive mixer. The band selection is performed by switching a capacitor in and out of the LNA load, changing the resonance frequency between 2.2GHz and 4.0GHz. The measured noise figure is below 3.5dB for both frequency bands for supply voltages from 1.8V down to 1V. The conversion gain is more than 10dB, and the third order intercept point (IIPs) is above -6dBm. The circuit draws 2.4mA from a 1V supply
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
common-gate low noise amplifier, CMOS dual-band front-end, capacitive cross coupling, passive mixer, capacitor switching, 2.4 mA, resonance frequency, 2.2 to 4 GHz, 0.18 micron, 1.8 V, 1 V
in
2005 IEEE Asian Solid-State Circuits Conference
pages
4 pages
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
2005 IEEE Asian Solid-State Circuits Conference
external identifiers
  • WOS:000240872200021
  • Scopus:34250743084
ISBN
0-7803-9162-4
DOI
10.1109/ASSCC.2005.251812
language
English
LU publication?
yes
id
2c47631b-3e53-4926-93ad-50adf3ed9224 (old id 615347)
date added to LUP
2007-11-25 15:54:39
date last changed
2016-10-13 04:38:15
@misc{2c47631b-3e53-4926-93ad-50adf3ed9224,
  abstract     = {A dual-band CMOS front-end was designed and fabricated in a 0.18 μm CMOS process. The front-end employs a common-gate low noise amplifier (LNA) with capacitive cross coupling (CCC) technique and a passive mixer. The band selection is performed by switching a capacitor in and out of the LNA load, changing the resonance frequency between 2.2GHz and 4.0GHz. The measured noise figure is below 3.5dB for both frequency bands for supply voltages from 1.8V down to 1V. The conversion gain is more than 10dB, and the third order intercept point (IIPs) is above -6dBm. The circuit draws 2.4mA from a 1V supply},
  author       = {Phansathitwong, Kittichai and Sjöland, Henrik},
  isbn         = {0-7803-9162-4},
  keyword      = {common-gate low noise amplifier,CMOS dual-band front-end,capacitive cross coupling,passive mixer,capacitor switching,2.4 mA,resonance frequency,2.2 to 4 GHz,0.18 micron,1.8 V,1 V},
  language     = {eng},
  pages        = {81--84},
  publisher    = {ARRAY(0xb9879e0)},
  series       = {2005 IEEE Asian Solid-State Circuits Conference},
  title        = {Low power 0.18μm CMOS dual-band front-end},
  url          = {http://dx.doi.org/10.1109/ASSCC.2005.251812},
  year         = {2005},
}