Advanced

A study of the neutral undistorted vacancy in silicon

Lindefelt, Ulf (1978) In Journal of Physics C: Solid State Physics 11(17). p.3651-3651
Abstract
Within the local energy independent pseudopotential theory, a convergent supercell calculation of the position of the discrete impurity level produced by the neutral undistorted vacancy in silicon has been performed. Translational symmetry was reintroduced by placing the impurities on a Bravais lattice. The author made calculations with unit cells containing up to 2662 atoms plus vacancy. A deep level in the lower part of the fundamental band gap is found, lying 0.18 eV above the top of the valence bands. The results also indicate that the localised impurity wavefunction decreases rather slowly and extends to 30 Å.(35 refs)
Please use this url to cite or link to this publication:
author
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Physics C: Solid State Physics
volume
11
issue
17
pages
3651 - 3651
publisher
Institute of Physics
external identifiers
  • Scopus:2442664186
ISSN
0022-3719
DOI
10.1088/0022-3719/11/17/017
language
English
LU publication?
no
id
40284bd3-1a93-4999-8110-5eb44ea7a418 (old id 8831932)
date added to LUP
2016-03-04 09:50:24
date last changed
2016-10-13 04:32:39
@misc{40284bd3-1a93-4999-8110-5eb44ea7a418,
  abstract     = {Within the local energy independent pseudopotential theory, a convergent supercell calculation of the position of the discrete impurity level produced by the neutral undistorted vacancy in silicon has been performed. Translational symmetry was reintroduced by placing the impurities on a Bravais lattice. The author made calculations with unit cells containing up to 2662 atoms plus vacancy. A deep level in the lower part of the fundamental band gap is found, lying 0.18 eV above the top of the valence bands. The results also indicate that the localised impurity wavefunction decreases rather slowly and extends to 30 Å.(35 refs)},
  author       = {Lindefelt, Ulf},
  issn         = {0022-3719},
  language     = {eng},
  number       = {17},
  pages        = {3651--3651},
  publisher    = {ARRAY(0x9e05998)},
  series       = {Journal of Physics C: Solid State Physics},
  title        = {A study of the neutral undistorted vacancy in silicon},
  url          = {http://dx.doi.org/10.1088/0022-3719/11/17/017},
  volume       = {11},
  year         = {1978},
}