A study of the neutral undistorted vacancy in silicon
(1978) In Journal of Physics C: Solid State Physics 11(17). p.3651-3651- Abstract
- Within the local energy independent pseudopotential theory, a convergent supercell calculation of the position of the discrete impurity level produced by the neutral undistorted vacancy in silicon has been performed. Translational symmetry was reintroduced by placing the impurities on a Bravais lattice. The author made calculations with unit cells containing up to 2662 atoms plus vacancy. A deep level in the lower part of the fundamental band gap is found, lying 0.18 eV above the top of the valence bands. The results also indicate that the localised impurity wavefunction decreases rather slowly and extends to 30 Å.(35 refs)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/8831932
- author
- Lindefelt, Ulf
- publishing date
- 1978
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Physics C: Solid State Physics
- volume
- 11
- issue
- 17
- pages
- 3651 - 3651
- publisher
- IOP Publishing
- external identifiers
-
- scopus:2442664186
- ISSN
- 0022-3719
- DOI
- 10.1088/0022-3719/11/17/017
- language
- English
- LU publication?
- no
- additional info
- DOI: 10.1088/0022-3719/11/17/017 Lindefelt: Doktorand sedan forskningsass via NFR vid dåvarande fasta tillståndets teori, nuvarande Matematisk fysik.
- id
- 40284bd3-1a93-4999-8110-5eb44ea7a418 (old id 8831932)
- date added to LUP
- 2016-04-04 09:32:58
- date last changed
- 2021-01-03 08:51:26
@article{40284bd3-1a93-4999-8110-5eb44ea7a418, abstract = {{Within the local energy independent pseudopotential theory, a convergent supercell calculation of the position of the discrete impurity level produced by the neutral undistorted vacancy in silicon has been performed. Translational symmetry was reintroduced by placing the impurities on a Bravais lattice. The author made calculations with unit cells containing up to 2662 atoms plus vacancy. A deep level in the lower part of the fundamental band gap is found, lying 0.18 eV above the top of the valence bands. The results also indicate that the localised impurity wavefunction decreases rather slowly and extends to 30 Å.(35 refs)}}, author = {{Lindefelt, Ulf}}, issn = {{0022-3719}}, language = {{eng}}, number = {{17}}, pages = {{3651--3651}}, publisher = {{IOP Publishing}}, series = {{Journal of Physics C: Solid State Physics}}, title = {{A study of the neutral undistorted vacancy in silicon}}, url = {{http://dx.doi.org/10.1088/0022-3719/11/17/017}}, doi = {{10.1088/0022-3719/11/17/017}}, volume = {{11}}, year = {{1978}}, }