Advanced

Template-assisted selective epitaxy of III-V nanoscale devices for co-planar heterogeneous integration with Si

Schmid, H.; Borg, Mattias LU ; Moselund, K.; Gignac, L.; Breslin, C. M.; Bruley, J.; Cutaia, D. and Riel, H. (2015) In Applied Physics Letters 106(23).
Abstract

III-V nanoscale devices were monolithically integrated on silicon-on-insulator (SOI) substrates by template-assisted selective epitaxy (TASE) using metal organic chemical vapor deposition. Single crystal III-V (InAs, InGaAs, GaAs) nanostructures, such as nanowires, nanostructures containing constrictions, and cross junctions, as well as 3D stacked nanowires were directly obtained by epitaxial filling of lithographically defined oxide templates. The benefit of TASE is exemplified by the straightforward fabrication of nanoscale Hall structures as well as multiple gate field effect transistors (MuG-FETs) grown co-planar to the SOI layer. Hall measurements on InAs nanowire cross junctions revealed an electron mobility of 54002/V... (More)

III-V nanoscale devices were monolithically integrated on silicon-on-insulator (SOI) substrates by template-assisted selective epitaxy (TASE) using metal organic chemical vapor deposition. Single crystal III-V (InAs, InGaAs, GaAs) nanostructures, such as nanowires, nanostructures containing constrictions, and cross junctions, as well as 3D stacked nanowires were directly obtained by epitaxial filling of lithographically defined oxide templates. The benefit of TASE is exemplified by the straightforward fabrication of nanoscale Hall structures as well as multiple gate field effect transistors (MuG-FETs) grown co-planar to the SOI layer. Hall measurements on InAs nanowire cross junctions revealed an electron mobility of 54002/V s, while the alongside fabricated InAs MuG-FETs with ten 55 nm wide, 23 nm thick, and 390 nm long channels exhibit an on current of 660 μA/μm and a peak transconductance of 1.0 mS/μm at VDS = 0.5 V. These results demonstrate TASE as a promising fabrication approach for heterogeneous material integration on Si.

(Less)
Please use this url to cite or link to this publication:
author
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
106
issue
23
publisher
American Institute of Physics
external identifiers
  • Scopus:84931292154
ISSN
0003-6951
DOI
10.1063/1.4921962
language
English
LU publication?
no
id
b31a37c3-ea5c-497c-98cc-4f653799cfac
date added to LUP
2016-04-20 10:26:48
date last changed
2016-11-27 04:39:36
@misc{b31a37c3-ea5c-497c-98cc-4f653799cfac,
  abstract     = {<p>III-V nanoscale devices were monolithically integrated on silicon-on-insulator (SOI) substrates by template-assisted selective epitaxy (TASE) using metal organic chemical vapor deposition. Single crystal III-V (InAs, InGaAs, GaAs) nanostructures, such as nanowires, nanostructures containing constrictions, and cross junctions, as well as 3D stacked nanowires were directly obtained by epitaxial filling of lithographically defined oxide templates. The benefit of TASE is exemplified by the straightforward fabrication of nanoscale Hall structures as well as multiple gate field effect transistors (MuG-FETs) grown co-planar to the SOI layer. Hall measurements on InAs nanowire cross junctions revealed an electron mobility of 5400<sup>2</sup>/V s, while the alongside fabricated InAs MuG-FETs with ten 55 nm wide, 23 nm thick, and 390 nm long channels exhibit an on current of 660 μA/μm and a peak transconductance of 1.0 mS/μm at V<sub>DS</sub> = 0.5 V. These results demonstrate TASE as a promising fabrication approach for heterogeneous material integration on Si.</p>},
  author       = {Schmid, H. and Borg, Mattias and Moselund, K. and Gignac, L. and Breslin, C. M. and Bruley, J. and Cutaia, D. and Riel, H.},
  issn         = {0003-6951},
  language     = {eng},
  month        = {06},
  number       = {23},
  publisher    = {ARRAY(0x88681b8)},
  series       = {Applied Physics Letters},
  title        = {Template-assisted selective epitaxy of III-V nanoscale devices for co-planar heterogeneous integration with Si},
  url          = {http://dx.doi.org/10.1063/1.4921962},
  volume       = {106},
  year         = {2015},
}