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III-V semiconductor nanowires for future devices

Schmid, Heinz ; Borg, Mattias LU orcid ; Moselund, K. ; Das Kanungo, P. ; Signorello, G. ; Karg, S. ; Mensch, P. ; Schmidt, V. and Riel, H. (2014) 17th Design, Automation and Test in Europe, DATE 2014
Abstract

The monolithic integration of III-V nanowires on silicon by direct epitaxial growth enables new possibilities for the design and fabrication of electronic as well as optoelectronic devices. We demonstrate a new growth technique to directly integrate III-V semiconducting nanowires on silicon using selective area epitaxy within a nanotube template. Thus we achieve small diameter nanowires, controlled doping profiles and sharp heterojunctions essential for future device applications. We experimentally demonstrate vertical tunnel diodes and gate-all-around tunnel FETs based on InAs-Si nanowire heterojunctions. The results indicate the benefits of the InAs-Si material system combining the possibility of achieving high Ion with... (More)

The monolithic integration of III-V nanowires on silicon by direct epitaxial growth enables new possibilities for the design and fabrication of electronic as well as optoelectronic devices. We demonstrate a new growth technique to directly integrate III-V semiconducting nanowires on silicon using selective area epitaxy within a nanotube template. Thus we achieve small diameter nanowires, controlled doping profiles and sharp heterojunctions essential for future device applications. We experimentally demonstrate vertical tunnel diodes and gate-all-around tunnel FETs based on InAs-Si nanowire heterojunctions. The results indicate the benefits of the InAs-Si material system combining the possibility of achieving high Ion with high Ion/Ioff ratio.

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Please use this url to cite or link to this publication:
author
; ; ; ; ; ; ; and
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Esaki diodes, III-V semiconductors, nanowires, Tunnel FETs
host publication
Proceedings -Design, Automation and Test in Europe, DATE
article number
6800448
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
17th Design, Automation and Test in Europe, DATE 2014
conference location
Dresden, Germany
conference dates
2014-03-24 - 2014-03-28
external identifiers
  • scopus:84903826882
ISBN
9783981537024
DOI
10.7873/DATE2014.247
language
English
LU publication?
no
id
b9221b7e-3b61-44db-9f2a-775e70f48612
date added to LUP
2016-04-20 10:34:07
date last changed
2022-01-30 02:49:44
@inproceedings{b9221b7e-3b61-44db-9f2a-775e70f48612,
  abstract     = {{<p>The monolithic integration of III-V nanowires on silicon by direct epitaxial growth enables new possibilities for the design and fabrication of electronic as well as optoelectronic devices. We demonstrate a new growth technique to directly integrate III-V semiconducting nanowires on silicon using selective area epitaxy within a nanotube template. Thus we achieve small diameter nanowires, controlled doping profiles and sharp heterojunctions essential for future device applications. We experimentally demonstrate vertical tunnel diodes and gate-all-around tunnel FETs based on InAs-Si nanowire heterojunctions. The results indicate the benefits of the InAs-Si material system combining the possibility of achieving high I<sub>on</sub> with high I<sub>on</sub>/I<sub>off</sub> ratio.</p>}},
  author       = {{Schmid, Heinz and Borg, Mattias and Moselund, K. and Das Kanungo, P. and Signorello, G. and Karg, S. and Mensch, P. and Schmidt, V. and Riel, H.}},
  booktitle    = {{Proceedings -Design, Automation and Test in Europe, DATE}},
  isbn         = {{9783981537024}},
  keywords     = {{Esaki diodes; III-V semiconductors; nanowires; Tunnel FETs}},
  language     = {{eng}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{III-V semiconductor nanowires for future devices}},
  url          = {{http://dx.doi.org/10.7873/DATE2014.247}},
  doi          = {{10.7873/DATE2014.247}},
  year         = {{2014}},
}