Comparison of two SiGe 2-stage E-band Power Amplifier Architectures
(2017) IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APPCAS 2016) 13. p.666-669- Abstract
- This paper presents simulation and measurement results for two 2-stage E-band power amplifiers implemented in 0.18um SiGe technology with fT = 200 GHz. To increase the power gain by mitigating the effect of the base-collector capacitance, the first design uses a differential cascode topology with a 2.7 V supply voltage. The second design instead uses capacitive cross-coupling of a differential common emitter stage, previously not demonstrated in mm-wave SiGe PAs, and has a supply voltage of only 1.5V. Low supply voltage is advantageous since a common supply can then be shared between the transceiver and the PA. To maximize the power gain and robustness, both designs use a transformer based interstage matching. The cascode design achieves... (More)
- This paper presents simulation and measurement results for two 2-stage E-band power amplifiers implemented in 0.18um SiGe technology with fT = 200 GHz. To increase the power gain by mitigating the effect of the base-collector capacitance, the first design uses a differential cascode topology with a 2.7 V supply voltage. The second design instead uses capacitive cross-coupling of a differential common emitter stage, previously not demonstrated in mm-wave SiGe PAs, and has a supply voltage of only 1.5V. Low supply voltage is advantageous since a common supply can then be shared between the transceiver and the PA. To maximize the power gain and robustness, both designs use a transformer based interstage matching. The cascode design achieves a measured power gain, S21 , of 16 dB at 92 GHz with 17GHz 3-dB bandwidth, and a simulated saturated output power, Psat , of 17 dBm with a 16% peak PAE. The cross-coupled design achieves a measured S21 of 10 dB at 93 GHz with 16 GHz 3-dB bandwidth, and a simulated Psat, of 15 dBm with 16% peak PAE. Comparing the measured and simulated results for the two amplifier architectures, the cascode topology is more robust, while the cross-coupled topology would benefit from a programmable cross-coupling capacitance. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/004fb0e2-9e09-4a8d-980f-a17bb43193ab
- author
- TIRED, TOBIAS
LU
; Sjöland, Henrik
LU
; Jönsson, Göran LU and Wernehag, Johan LU
- organization
- publishing date
- 2017
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- PA, E-band, SiGe, PA, E-band, SiGe
- host publication
- IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016
- volume
- 13
- pages
- 4 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APPCAS 2016)
- conference location
- Jeju Island, Korea, Republic of
- conference dates
- 2016-10-25 - 2016-10-28
- external identifiers
-
- scopus:85011103208
- ISBN
- 978-150901570-2
- DOI
- 10.1109/APCCAS.2016.7804085
- language
- English
- LU publication?
- yes
- id
- 004fb0e2-9e09-4a8d-980f-a17bb43193ab
- date added to LUP
- 2016-08-10 11:59:20
- date last changed
- 2024-03-07 10:18:29
@inproceedings{004fb0e2-9e09-4a8d-980f-a17bb43193ab, abstract = {{This paper presents simulation and measurement results for two 2-stage E-band power amplifiers implemented in 0.18um SiGe technology with fT = 200 GHz. To increase the power gain by mitigating the effect of the base-collector capacitance, the first design uses a differential cascode topology with a 2.7 V supply voltage. The second design instead uses capacitive cross-coupling of a differential common emitter stage, previously not demonstrated in mm-wave SiGe PAs, and has a supply voltage of only 1.5V. Low supply voltage is advantageous since a common supply can then be shared between the transceiver and the PA. To maximize the power gain and robustness, both designs use a transformer based interstage matching. The cascode design achieves a measured power gain, S21 , of 16 dB at 92 GHz with 17GHz 3-dB bandwidth, and a simulated saturated output power, Psat , of 17 dBm with a 16% peak PAE. The cross-coupled design achieves a measured S21 of 10 dB at 93 GHz with 16 GHz 3-dB bandwidth, and a simulated Psat, of 15 dBm with 16% peak PAE. Comparing the measured and simulated results for the two amplifier architectures, the cascode topology is more robust, while the cross-coupled topology would benefit from a programmable cross-coupling capacitance.}}, author = {{TIRED, TOBIAS and Sjöland, Henrik and Jönsson, Göran and Wernehag, Johan}}, booktitle = {{IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016}}, isbn = {{978-150901570-2}}, keywords = {{PA; E-band; SiGe; PA; E-band; SiGe}}, language = {{eng}}, pages = {{666--669}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Comparison of two SiGe 2-stage E-band Power Amplifier Architectures}}, url = {{http://dx.doi.org/10.1109/APCCAS.2016.7804085}}, doi = {{10.1109/APCCAS.2016.7804085}}, volume = {{13}}, year = {{2017}}, }