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Comparison of two SiGe 2-stage E-band Power Amplifier Architectures

TIRED, TOBIAS LU ; Sjöland, Henrik LU ; Jönsson, Göran LU and Wernehag, Johan LU (2017) IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APPCAS 2016) 13. p.666-669
Abstract
This paper presents simulation and measurement results for two 2-stage E-band power amplifiers implemented in 0.18um SiGe technology with fT = 200 GHz. To increase the power gain by mitigating the effect of the base-collector capacitance, the first design uses a differential cascode topology with a 2.7 V supply voltage. The second design instead uses capacitive cross-coupling of a differential common emitter stage, previously not demonstrated in mm-wave SiGe PAs, and has a supply voltage of only 1.5V. Low supply voltage is advantageous since a common supply can then be shared between the transceiver and the PA. To maximize the power gain and robustness, both designs use a transformer based interstage matching. The cascode design achieves... (More)
This paper presents simulation and measurement results for two 2-stage E-band power amplifiers implemented in 0.18um SiGe technology with fT = 200 GHz. To increase the power gain by mitigating the effect of the base-collector capacitance, the first design uses a differential cascode topology with a 2.7 V supply voltage. The second design instead uses capacitive cross-coupling of a differential common emitter stage, previously not demonstrated in mm-wave SiGe PAs, and has a supply voltage of only 1.5V. Low supply voltage is advantageous since a common supply can then be shared between the transceiver and the PA. To maximize the power gain and robustness, both designs use a transformer based interstage matching. The cascode design achieves a measured power gain, S21 , of 16 dB at 92 GHz with 17GHz 3-dB bandwidth, and a simulated saturated output power, Psat , of 17 dBm with a 16% peak PAE. The cross-coupled design achieves a measured S21 of 10 dB at 93 GHz with 16 GHz 3-dB bandwidth, and a simulated Psat, of 15 dBm with 16% peak PAE. Comparing the measured and simulated results for the two amplifier architectures, the cascode topology is more robust, while the cross-coupled topology would benefit from a programmable cross-coupling capacitance. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
PA, E-band, SiGe, PA, E-band, SiGe
host publication
IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016
volume
13
pages
4 pages
publisher
Institute of Electrical and Electronics Engineers Inc.
conference name
IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APPCAS 2016)
conference location
Jeju Island, Korea, Republic of
conference dates
2016-10-25 - 2016-10-28
external identifiers
  • scopus:85011103208
ISBN
978-150901570-2
DOI
10.1109/APCCAS.2016.7804085
language
English
LU publication?
yes
id
004fb0e2-9e09-4a8d-980f-a17bb43193ab
date added to LUP
2016-08-10 11:59:20
date last changed
2019-02-20 09:58:26
@inproceedings{004fb0e2-9e09-4a8d-980f-a17bb43193ab,
  abstract     = {This paper presents simulation and measurement results for two 2-stage E-band power amplifiers implemented in 0.18um SiGe technology with fT = 200 GHz. To increase the power gain by mitigating the effect of the base-collector capacitance, the first design uses a differential cascode topology with a 2.7 V supply voltage. The second design instead uses capacitive cross-coupling of a differential common emitter stage, previously not demonstrated in mm-wave SiGe PAs, and has a supply voltage of only 1.5V. Low supply voltage is advantageous since a common supply can then be shared between the transceiver and the PA. To maximize  the power gain and robustness, both designs use a transformer based interstage matching. The cascode design achieves a measured power gain, S21 , of 16 dB at 92 GHz with 17GHz 3-dB bandwidth, and a simulated saturated output power, Psat , of 17 dBm with a 16% peak PAE. The cross-coupled design achieves a  measured S21 of 10 dB at 93 GHz with 16 GHz 3-dB bandwidth, and a simulated Psat, of 15 dBm with 16% peak PAE. Comparing the measured and simulated results for the two amplifier architectures, the cascode topology is more robust, while the cross-coupled topology would  benefit from a programmable cross-coupling capacitance. },
  author       = {TIRED, TOBIAS and Sjöland, Henrik and Jönsson, Göran and Wernehag, Johan},
  isbn         = {978-150901570-2},
  keyword      = {PA,E-band,SiGe,PA,E-band,SiGe},
  language     = {eng},
  location     = {Jeju Island, Korea, Republic of},
  pages        = {666--669},
  publisher    = {Institute of Electrical and Electronics Engineers Inc.},
  title        = {Comparison of two SiGe 2-stage E-band Power Amplifier Architectures},
  url          = {http://dx.doi.org/10.1109/APCCAS.2016.7804085},
  volume       = {13},
  year         = {2017},
}