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Comparison of two SiGe 2-stage E-band Power Amplifier Architectures

TIRED, TOBIAS LU ; Sjöland, Henrik LU ; Jönsson, Göran LU and Wernehag, Johan LU (2017) IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APPCAS 2016) 13. p.666-669
Abstract
This paper presents simulation and measurement results for two 2-stage E-band power amplifiers implemented in 0.18um SiGe technology with fT = 200 GHz. To increase the power gain by mitigating the effect of the base-collector capacitance, the first design uses a differential cascode topology with a 2.7 V supply voltage. The second design instead uses capacitive cross-coupling of a differential common emitter stage, previously not demonstrated in mm-wave SiGe PAs, and has a supply voltage of only 1.5V. Low supply voltage is advantageous since a common supply can then be shared between the transceiver and the PA. To maximize the power gain and robustness, both designs use a transformer based interstage matching. The cascode design achieves... (More)
This paper presents simulation and measurement results for two 2-stage E-band power amplifiers implemented in 0.18um SiGe technology with fT = 200 GHz. To increase the power gain by mitigating the effect of the base-collector capacitance, the first design uses a differential cascode topology with a 2.7 V supply voltage. The second design instead uses capacitive cross-coupling of a differential common emitter stage, previously not demonstrated in mm-wave SiGe PAs, and has a supply voltage of only 1.5V. Low supply voltage is advantageous since a common supply can then be shared between the transceiver and the PA. To maximize the power gain and robustness, both designs use a transformer based interstage matching. The cascode design achieves a measured power gain, S21 , of 16 dB at 92 GHz with 17GHz 3-dB bandwidth, and a simulated saturated output power, Psat , of 17 dBm with a 16% peak PAE. The cross-coupled design achieves a measured S21 of 10 dB at 93 GHz with 16 GHz 3-dB bandwidth, and a simulated Psat, of 15 dBm with 16% peak PAE. Comparing the measured and simulated results for the two amplifier architectures, the cascode topology is more robust, while the cross-coupled topology would benefit from a programmable cross-coupling capacitance. (Less)
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
PA, E-band, SiGe, PA, E-band, SiGe
host publication
IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016
volume
13
pages
4 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APPCAS 2016)
conference location
Jeju Island, Korea, Republic of
conference dates
2016-10-25 - 2016-10-28
external identifiers
  • scopus:85011103208
ISBN
978-150901570-2
DOI
10.1109/APCCAS.2016.7804085
language
English
LU publication?
yes
id
004fb0e2-9e09-4a8d-980f-a17bb43193ab
date added to LUP
2016-08-10 11:59:20
date last changed
2022-03-08 20:07:35
@inproceedings{004fb0e2-9e09-4a8d-980f-a17bb43193ab,
  abstract     = {{This paper presents simulation and measurement results for two 2-stage E-band power amplifiers implemented in 0.18um SiGe technology with fT = 200 GHz. To increase the power gain by mitigating the effect of the base-collector capacitance, the first design uses a differential cascode topology with a 2.7 V supply voltage. The second design instead uses capacitive cross-coupling of a differential common emitter stage, previously not demonstrated in mm-wave SiGe PAs, and has a supply voltage of only 1.5V. Low supply voltage is advantageous since a common supply can then be shared between the transceiver and the PA. To maximize  the power gain and robustness, both designs use a transformer based interstage matching. The cascode design achieves a measured power gain, S21 , of 16 dB at 92 GHz with 17GHz 3-dB bandwidth, and a simulated saturated output power, Psat , of 17 dBm with a 16% peak PAE. The cross-coupled design achieves a  measured S21 of 10 dB at 93 GHz with 16 GHz 3-dB bandwidth, and a simulated Psat, of 15 dBm with 16% peak PAE. Comparing the measured and simulated results for the two amplifier architectures, the cascode topology is more robust, while the cross-coupled topology would  benefit from a programmable cross-coupling capacitance.}},
  author       = {{TIRED, TOBIAS and Sjöland, Henrik and Jönsson, Göran and Wernehag, Johan}},
  booktitle    = {{IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016}},
  isbn         = {{978-150901570-2}},
  keywords     = {{PA; E-band; SiGe; PA; E-band; SiGe}},
  language     = {{eng}},
  pages        = {{666--669}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{Comparison of two SiGe 2-stage E-band Power Amplifier Architectures}},
  url          = {{http://dx.doi.org/10.1109/APCCAS.2016.7804085}},
  doi          = {{10.1109/APCCAS.2016.7804085}},
  volume       = {{13}},
  year         = {{2017}},
}