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Comparison of two SiGe 2-stage E-band Power Amplifier Architectures

TIRED, TOBIAS LU ; Sjöland, Henrik LU ; Jönsson, Göran LU and Wernehag, Johan LU (2017) IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APPCAS 2016) In IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016 13. p.666-669
Abstract
This paper presents simulation and measurement results for two 2-stage E-band power amplifiers implemented in 0.18um SiGe technology with fT = 200 GHz. To increase the power gain by mitigating the effect of the base-collector capacitance, the first design uses a differential cascode topology with a 2.7 V supply voltage. The second design instead uses capacitive cross-coupling of a differential common emitter stage, previously not demonstrated in mm-wave SiGe PAs, and has a supply voltage of only 1.5V. Low supply voltage is advantageous since a common supply can then be shared between the transceiver and the PA. To maximize the power gain and robustness, both designs use a transformer based interstage matching. The cascode design achieves... (More)
This paper presents simulation and measurement results for two 2-stage E-band power amplifiers implemented in 0.18um SiGe technology with fT = 200 GHz. To increase the power gain by mitigating the effect of the base-collector capacitance, the first design uses a differential cascode topology with a 2.7 V supply voltage. The second design instead uses capacitive cross-coupling of a differential common emitter stage, previously not demonstrated in mm-wave SiGe PAs, and has a supply voltage of only 1.5V. Low supply voltage is advantageous since a common supply can then be shared between the transceiver and the PA. To maximize the power gain and robustness, both designs use a transformer based interstage matching. The cascode design achieves a measured power gain, S21 , of 16 dB at 92 GHz with 17GHz 3-dB bandwidth, and a simulated saturated output power, Psat , of 17 dBm with a 16% peak PAE. The cross-coupled design achieves a measured S21 of 10 dB at 93 GHz with 16 GHz 3-dB bandwidth, and a simulated Psat, of 15 dBm with 16% peak PAE. Comparing the measured and simulated results for the two amplifier architectures, the cascode topology is more robust, while the cross-coupled topology would benefit from a programmable cross-coupling capacitance. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
PA, E-band, SiGe, PA, E-band, SiGe
in
IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016
volume
13
pages
4 pages
publisher
Institute of Electrical and Electronics Engineers Inc.
conference name
IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APPCAS 2016)
external identifiers
  • scopus:85011103208
DOI
10.1109/APCCAS.2016.7804085
language
English
LU publication?
yes
id
004fb0e2-9e09-4a8d-980f-a17bb43193ab
date added to LUP
2016-08-10 11:59:20
date last changed
2017-03-05 04:35:36
@inproceedings{004fb0e2-9e09-4a8d-980f-a17bb43193ab,
  abstract     = {This paper presents simulation and measurement results for two 2-stage E-band power amplifiers implemented in 0.18um SiGe technology with fT = 200 GHz. To increase the power gain by mitigating the effect of the base-collector capacitance, the first design uses a differential cascode topology with a 2.7 V supply voltage. The second design instead uses capacitive cross-coupling of a differential common emitter stage, previously not demonstrated in mm-wave SiGe PAs, and has a supply voltage of only 1.5V. Low supply voltage is advantageous since a common supply can then be shared between the transceiver and the PA. To maximize  the power gain and robustness, both designs use a transformer based interstage matching. The cascode design achieves a measured power gain, S21 , of 16 dB at 92 GHz with 17GHz 3-dB bandwidth, and a simulated saturated output power, Psat , of 17 dBm with a 16% peak PAE. The cross-coupled design achieves a  measured S21 of 10 dB at 93 GHz with 16 GHz 3-dB bandwidth, and a simulated Psat, of 15 dBm with 16% peak PAE. Comparing the measured and simulated results for the two amplifier architectures, the cascode topology is more robust, while the cross-coupled topology would  benefit from a programmable cross-coupling capacitance. },
  author       = {TIRED, TOBIAS and Sjöland, Henrik and Jönsson, Göran and Wernehag, Johan},
  booktitle    = {IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016},
  keyword      = {PA,E-band,SiGe,PA,E-band,SiGe},
  language     = {eng},
  pages        = {666--669},
  publisher    = {Institute of Electrical and Electronics Engineers Inc.},
  title        = {Comparison of two SiGe 2-stage E-band Power Amplifier Architectures},
  url          = {http://dx.doi.org/10.1109/APCCAS.2016.7804085},
  volume       = {13},
  year         = {2017},
}