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Interface dynamics and crystal phase switching in GaAs nanowires

Jacobsson, Daniel LU ; Panciera, Federico; Tersoff, Jerry; Reuter, Mark C.; Lehmann, Sebastian LU ; Hofmann, Stephan; Dick, Kimberly A. LU and Ross, Frances M. LU (2016) In Nature 531(7594). p.317-322
Abstract

Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying the fundamental physics of phase selection, and could lead to new electronic applications based on the engineering of crystal phases. Here we image gallium arsenide (GaAs) nanowires during growth as they switch between phases as a result of varying growth conditions. We find clear differences between the growth dynamics of the phases, including differences in interface morphology, step flow and catalyst geometry. We explain these differences, and the phase selection, using a model that relates the catalyst volume, the contact angle at the trijunction (the point... (More)

Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying the fundamental physics of phase selection, and could lead to new electronic applications based on the engineering of crystal phases. Here we image gallium arsenide (GaAs) nanowires during growth as they switch between phases as a result of varying growth conditions. We find clear differences between the growth dynamics of the phases, including differences in interface morphology, step flow and catalyst geometry. We explain these differences, and the phase selection, using a model that relates the catalyst volume, the contact angle at the trijunction (the point at which solid, liquid and vapour meet) and the nucleation site of each new layer of GaAs. This model allows us to predict the conditions under which each phase should be observed, and use these predictions to design GaAs heterostructures. These results could apply to phase selection in other nanowire systems.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nature
volume
531
issue
7594
pages
6 pages
publisher
Nature Publishing Group
external identifiers
  • scopus:84982267454
  • wos:000372064300042
ISSN
0028-0836
DOI
10.1038/nature17148
language
English
LU publication?
yes
id
0329eab1-74df-49ff-8db1-fc3883164c41
date added to LUP
2016-10-07 13:50:41
date last changed
2017-04-16 04:40:46
@article{0329eab1-74df-49ff-8db1-fc3883164c41,
  abstract     = {<p>Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying the fundamental physics of phase selection, and could lead to new electronic applications based on the engineering of crystal phases. Here we image gallium arsenide (GaAs) nanowires during growth as they switch between phases as a result of varying growth conditions. We find clear differences between the growth dynamics of the phases, including differences in interface morphology, step flow and catalyst geometry. We explain these differences, and the phase selection, using a model that relates the catalyst volume, the contact angle at the trijunction (the point at which solid, liquid and vapour meet) and the nucleation site of each new layer of GaAs. This model allows us to predict the conditions under which each phase should be observed, and use these predictions to design GaAs heterostructures. These results could apply to phase selection in other nanowire systems.</p>},
  author       = {Jacobsson, Daniel and Panciera, Federico and Tersoff, Jerry and Reuter, Mark C. and Lehmann, Sebastian and Hofmann, Stephan and Dick, Kimberly A. and Ross, Frances M.},
  issn         = {0028-0836},
  language     = {eng},
  month        = {03},
  number       = {7594},
  pages        = {317--322},
  publisher    = {Nature Publishing Group},
  series       = {Nature},
  title        = {Interface dynamics and crystal phase switching in GaAs nanowires},
  url          = {http://dx.doi.org/10.1038/nature17148},
  volume       = {531},
  year         = {2016},
}