Tuning the morphology of self-assisted GaP nanowires
(2018) In Nanotechnology 29(22).- Abstract
Patterned arrays of self-assisted GaP nanowires (NWs) were grown on a Si substrate by gas source molecular beam epitaxy using various V/III flux ratios from 1-6, and various pitches from 360-1000 nm. As the V/III flux ratio was increased from 1-6, the NWs showed a change in morphology from outward tapering to straight, and eventually to inward tapering. The morphologies of the self-assisted GaP NWs are well described by a simple kinetic equation for the NW radius versus the position along the NW axis. The most important growth parameter that governs the NW morphology is the V/III flux ratio. Sharpened NWs with a stable radius equal to only 12 nm at a V/III flux of 6 were achieved, demonstrating their suitability for the insertion of... (More)
Patterned arrays of self-assisted GaP nanowires (NWs) were grown on a Si substrate by gas source molecular beam epitaxy using various V/III flux ratios from 1-6, and various pitches from 360-1000 nm. As the V/III flux ratio was increased from 1-6, the NWs showed a change in morphology from outward tapering to straight, and eventually to inward tapering. The morphologies of the self-assisted GaP NWs are well described by a simple kinetic equation for the NW radius versus the position along the NW axis. The most important growth parameter that governs the NW morphology is the V/III flux ratio. Sharpened NWs with a stable radius equal to only 12 nm at a V/III flux of 6 were achieved, demonstrating their suitability for the insertion of quantum dots.
(Less)
- author
- Leshchenko, E. D. LU ; Kuyanov, P. ; Lapierre, R. R. and Dubrovskii, V. G.
- organization
- publishing date
- 2018-03-29
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- GaP nanowires, growth modeling, morphology
- in
- Nanotechnology
- volume
- 29
- issue
- 22
- article number
- 225603
- publisher
- IOP Publishing
- external identifiers
-
- scopus:85045550486
- pmid:29509146
- ISSN
- 0957-4484
- DOI
- 10.1088/1361-6528/aab47b
- language
- English
- LU publication?
- yes
- id
- 043a216b-b4fb-4c41-96d0-14ddc6a607f3
- date added to LUP
- 2018-04-27 14:16:11
- date last changed
- 2024-03-18 08:56:45
@article{043a216b-b4fb-4c41-96d0-14ddc6a607f3,
abstract = {{<p>Patterned arrays of self-assisted GaP nanowires (NWs) were grown on a Si substrate by gas source molecular beam epitaxy using various V/III flux ratios from 1-6, and various pitches from 360-1000 nm. As the V/III flux ratio was increased from 1-6, the NWs showed a change in morphology from outward tapering to straight, and eventually to inward tapering. The morphologies of the self-assisted GaP NWs are well described by a simple kinetic equation for the NW radius versus the position along the NW axis. The most important growth parameter that governs the NW morphology is the V/III flux ratio. Sharpened NWs with a stable radius equal to only 12 nm at a V/III flux of 6 were achieved, demonstrating their suitability for the insertion of quantum dots.</p>}},
author = {{Leshchenko, E. D. and Kuyanov, P. and Lapierre, R. R. and Dubrovskii, V. G.}},
issn = {{0957-4484}},
keywords = {{GaP nanowires; growth modeling; morphology}},
language = {{eng}},
month = {{03}},
number = {{22}},
publisher = {{IOP Publishing}},
series = {{Nanotechnology}},
title = {{Tuning the morphology of self-assisted GaP nanowires}},
url = {{http://dx.doi.org/10.1088/1361-6528/aab47b}},
doi = {{10.1088/1361-6528/aab47b}},
volume = {{29}},
year = {{2018}},
}