Atomic-Scale Tuning of Graphene/Cubic SiC Schottky Junction for Stable Low-Bias Photoelectrochemical Solar-to-Fuel Conversion
(2020) In ACS Nano 14(4). p.4905-4915- Abstract
Engineering tunable graphene-semiconductor interfaces while simultaneously preserving the superior properties of graphene is critical to graphene-based devices for electronic, optoelectronic, biomedical, and photoelectrochemical applications. Here, we demonstrate this challenge can be surmounted by constructing an interesting atomic Schottky junction via epitaxial growth of high-quality and uniform graphene on cubic SiC (3C-SiC). By tailoring the graphene layers, the junction structure described herein exhibits an atomic-scale tunable Schottky junction with an inherent built-in electric field, making it a perfect prototype to systematically comprehend interfacial electronic properties and transport mechanisms. As a proof-of-concept... (More)
Engineering tunable graphene-semiconductor interfaces while simultaneously preserving the superior properties of graphene is critical to graphene-based devices for electronic, optoelectronic, biomedical, and photoelectrochemical applications. Here, we demonstrate this challenge can be surmounted by constructing an interesting atomic Schottky junction via epitaxial growth of high-quality and uniform graphene on cubic SiC (3C-SiC). By tailoring the graphene layers, the junction structure described herein exhibits an atomic-scale tunable Schottky junction with an inherent built-in electric field, making it a perfect prototype to systematically comprehend interfacial electronic properties and transport mechanisms. As a proof-of-concept study, the atomic-scale-tuned Schottky junction is demonstrated to promote both the separation and transport of charge carriers in a typical photoelectrochemical system for solar-to-fuel conversion under low bias. Simultaneously, the as-grown monolayer graphene with an extremely high conductivity protects the surface of 3C-SiC from photocorrosion and energetically delivers charge carriers to the loaded cocatalyst, achieving a synergetic enhancement of the catalytic stability and efficiency.
(Less)
- author
- organization
- publishing date
- 2020
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- CO2 reduction, graphene, photoelectrochemistry, Schottky junction, SiC
- in
- ACS Nano
- volume
- 14
- issue
- 4
- pages
- 11 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:32243124
- scopus:85084167030
- ISSN
- 1936-086X
- DOI
- 10.1021/acsnano.0c00986
- language
- English
- LU publication?
- yes
- id
- 062ff3dc-1664-4d26-8d4a-012968ebfdd6
- date added to LUP
- 2021-01-05 10:01:14
- date last changed
- 2024-08-22 10:27:54
@article{062ff3dc-1664-4d26-8d4a-012968ebfdd6, abstract = {{<p>Engineering tunable graphene-semiconductor interfaces while simultaneously preserving the superior properties of graphene is critical to graphene-based devices for electronic, optoelectronic, biomedical, and photoelectrochemical applications. Here, we demonstrate this challenge can be surmounted by constructing an interesting atomic Schottky junction via epitaxial growth of high-quality and uniform graphene on cubic SiC (3C-SiC). By tailoring the graphene layers, the junction structure described herein exhibits an atomic-scale tunable Schottky junction with an inherent built-in electric field, making it a perfect prototype to systematically comprehend interfacial electronic properties and transport mechanisms. As a proof-of-concept study, the atomic-scale-tuned Schottky junction is demonstrated to promote both the separation and transport of charge carriers in a typical photoelectrochemical system for solar-to-fuel conversion under low bias. Simultaneously, the as-grown monolayer graphene with an extremely high conductivity protects the surface of 3C-SiC from photocorrosion and energetically delivers charge carriers to the loaded cocatalyst, achieving a synergetic enhancement of the catalytic stability and efficiency.</p>}}, author = {{Li, Hao and Shi, Yuchen and Shang, Huan and Wang, Weimin and Lu, Jun and Zakharov, Alexei A. and Hultman, Lars and Uhrberg, Roger I.G. and Syväjärvi, Mikael and Yakimova, Rositsa and Zhang, Lizhi and Sun, Jianwu}}, issn = {{1936-086X}}, keywords = {{CO2 reduction; graphene; photoelectrochemistry; Schottky junction; SiC}}, language = {{eng}}, number = {{4}}, pages = {{4905--4915}}, publisher = {{The American Chemical Society (ACS)}}, series = {{ACS Nano}}, title = {{Atomic-Scale Tuning of Graphene/Cubic SiC Schottky Junction for Stable Low-Bias Photoelectrochemical Solar-to-Fuel Conversion}}, url = {{http://dx.doi.org/10.1021/acsnano.0c00986}}, doi = {{10.1021/acsnano.0c00986}}, volume = {{14}}, year = {{2020}}, }