Tunable Low Loss 1D Surface Plasmons in InAs Nanowires
(2018) In Advanced Materials 30(35).- Abstract
Due to the ability to manipulate photons at nanoscale, plasmonics has become one of the most important branches in nanophotonics. The prerequisites for the technological application of plasmons include high confining ability (λ0/λp), low damping, and easy tunability. However, plasmons in typical plasmonic materials, i.e., noble metals, cannot satisfy these three requirements simultaneously and cause a disconnection to modern electronics. Here, the indium arsenide (InAs) nanowire is identified as a material that satisfies all the three prerequisites, providing a natural analogy with modern electronics. The dispersion relation of InAs plasmons is determined using the nanoinfrared imaging technique, and show that... (More)
Due to the ability to manipulate photons at nanoscale, plasmonics has become one of the most important branches in nanophotonics. The prerequisites for the technological application of plasmons include high confining ability (λ0/λp), low damping, and easy tunability. However, plasmons in typical plasmonic materials, i.e., noble metals, cannot satisfy these three requirements simultaneously and cause a disconnection to modern electronics. Here, the indium arsenide (InAs) nanowire is identified as a material that satisfies all the three prerequisites, providing a natural analogy with modern electronics. The dispersion relation of InAs plasmons is determined using the nanoinfrared imaging technique, and show that their associated wavelengths and damping ratio can be tuned by altering the nanowire diameter and dielectric environment. The InAs plasmons possess advantages such as high confining ability, low loss, and ease of fabrication. The observation of InAs plasmons could enable novel plasmonic circuits for future subwavelength applications.
(Less)
- author
- organization
- publishing date
- 2018-01-01
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- CVD, InAs nanowire, Nanoinfrared imaging, Surface plasmon
- in
- Advanced Materials
- volume
- 30
- issue
- 35
- article number
- 1802551
- publisher
- John Wiley & Sons Inc.
- external identifiers
-
- pmid:29992734
- scopus:85050388653
- ISSN
- 0935-9648
- DOI
- 10.1002/adma.201802551
- language
- English
- LU publication?
- yes
- id
- 076ee985-9b31-4661-ba24-d8a9071aab5b
- date added to LUP
- 2018-08-29 13:45:54
- date last changed
- 2025-01-08 13:43:22
@article{076ee985-9b31-4661-ba24-d8a9071aab5b, abstract = {{<p>Due to the ability to manipulate photons at nanoscale, plasmonics has become one of the most important branches in nanophotonics. The prerequisites for the technological application of plasmons include high confining ability (λ<sub>0</sub>/λ<sub>p</sub>), low damping, and easy tunability. However, plasmons in typical plasmonic materials, i.e., noble metals, cannot satisfy these three requirements simultaneously and cause a disconnection to modern electronics. Here, the indium arsenide (InAs) nanowire is identified as a material that satisfies all the three prerequisites, providing a natural analogy with modern electronics. The dispersion relation of InAs plasmons is determined using the nanoinfrared imaging technique, and show that their associated wavelengths and damping ratio can be tuned by altering the nanowire diameter and dielectric environment. The InAs plasmons possess advantages such as high confining ability, low loss, and ease of fabrication. The observation of InAs plasmons could enable novel plasmonic circuits for future subwavelength applications.</p>}}, author = {{Zhou, Yixi and Chen, Runkun and Wang, Jingyun and Huang, Yisheng and Li, Ming and Xing, Yingjie and Duan, Jiahua and Chen, Jianjun and Farrell, James D. and Xu, H. Q. and Chen, Jianing}}, issn = {{0935-9648}}, keywords = {{CVD; InAs nanowire; Nanoinfrared imaging; Surface plasmon}}, language = {{eng}}, month = {{01}}, number = {{35}}, publisher = {{John Wiley & Sons Inc.}}, series = {{Advanced Materials}}, title = {{Tunable Low Loss 1D Surface Plasmons in InAs Nanowires}}, url = {{http://dx.doi.org/10.1002/adma.201802551}}, doi = {{10.1002/adma.201802551}}, volume = {{30}}, year = {{2018}}, }