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Two-Dimensional Quantum Transport in Free-Standing InSb Nanosheets

Kang, Ning; Fan, Dingxun; Zhi, Jinhua; Pan, Dong; Li, Sen; Wang, Cheng; Guo, Jingkun; Zhao, Jianhua and Xu, Hongqi LU (2019) In Nano Letters 19(1). p.561-569
Abstract

Low-dimensional narrow band gap III-V compound semiconductors, such as InAs and InSb, have attracted much attention as one of promising platforms for studying Majorana zero modes and non-Abelian statistics relevant for topological quantum computation. So far, most of experimental studies were performed on hybrid devices based on one-dimensional semiconductor nanowires. In order to build complex topological circuits toward scalable quantum computing, exploring high-mobility two-dimensional (2D) III-V compound electron system with strong spin-orbit coupling is highly desirable. Here, we study quantum transport in high-mobility InSb nanosheet grown by molecular-beam epitaxy. The observations of Shubnikov-de Hass oscillations and quantum... (More)

Low-dimensional narrow band gap III-V compound semiconductors, such as InAs and InSb, have attracted much attention as one of promising platforms for studying Majorana zero modes and non-Abelian statistics relevant for topological quantum computation. So far, most of experimental studies were performed on hybrid devices based on one-dimensional semiconductor nanowires. In order to build complex topological circuits toward scalable quantum computing, exploring high-mobility two-dimensional (2D) III-V compound electron system with strong spin-orbit coupling is highly desirable. Here, we study quantum transport in high-mobility InSb nanosheet grown by molecular-beam epitaxy. The observations of Shubnikov-de Hass oscillations and quantum Hall states, together with the angular dependence of magnetotransport measurements, provide the evidence for the 2D nature of electronic states in InSb nanosheet. The presence of strong spin-orbit coupling in the InSb nanosheet is verified by the low-field magnetotransport measurements, characterized by weak antilocalization effect. Finally, we demonstrate the realization of high-quality InSb nanosheet-superconductor junctions with transparent interface. Our results not only advance the study of 2D quantum transport but also open up opportunities for developing hybrid topological devices based on 2D semiconducting nanosheets with strong spin-orbit coupling.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
InSb nanosheet, Josephson junction, quantum Hall effect, spin-orbit interaction, two-dimensional transport
in
Nano Letters
volume
19
issue
1
pages
561 - 569
publisher
The American Chemical Society
external identifiers
  • scopus:85059422991
ISSN
1530-6984
DOI
10.1021/acs.nanolett.8b04556
language
English
LU publication?
yes
id
0788ded0-baa6-401f-9db0-d7b3fec0e3d8
date added to LUP
2019-01-17 09:04:10
date last changed
2019-02-20 11:43:11
@article{0788ded0-baa6-401f-9db0-d7b3fec0e3d8,
  abstract     = {<p>Low-dimensional narrow band gap III-V compound semiconductors, such as InAs and InSb, have attracted much attention as one of promising platforms for studying Majorana zero modes and non-Abelian statistics relevant for topological quantum computation. So far, most of experimental studies were performed on hybrid devices based on one-dimensional semiconductor nanowires. In order to build complex topological circuits toward scalable quantum computing, exploring high-mobility two-dimensional (2D) III-V compound electron system with strong spin-orbit coupling is highly desirable. Here, we study quantum transport in high-mobility InSb nanosheet grown by molecular-beam epitaxy. The observations of Shubnikov-de Hass oscillations and quantum Hall states, together with the angular dependence of magnetotransport measurements, provide the evidence for the 2D nature of electronic states in InSb nanosheet. The presence of strong spin-orbit coupling in the InSb nanosheet is verified by the low-field magnetotransport measurements, characterized by weak antilocalization effect. Finally, we demonstrate the realization of high-quality InSb nanosheet-superconductor junctions with transparent interface. Our results not only advance the study of 2D quantum transport but also open up opportunities for developing hybrid topological devices based on 2D semiconducting nanosheets with strong spin-orbit coupling.</p>},
  author       = {Kang, Ning and Fan, Dingxun and Zhi, Jinhua and Pan, Dong and Li, Sen and Wang, Cheng and Guo, Jingkun and Zhao, Jianhua and Xu, Hongqi},
  issn         = {1530-6984},
  keyword      = {InSb nanosheet,Josephson junction,quantum Hall effect,spin-orbit interaction,two-dimensional transport},
  language     = {eng},
  number       = {1},
  pages        = {561--569},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Two-Dimensional Quantum Transport in Free-Standing InSb Nanosheets},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.8b04556},
  volume       = {19},
  year         = {2019},
}