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Two mm-Wave VCOs in 28-nm UTBB FD-SOI CMOS

Forsberg, Therese LU ; Wernehag, Johan LU ; Nejdel, Anders LU ; Sjöland, Henrik LU and Törmänen, Markus LU (2017) In IEEE Microwave and Wireless Components Letters 27(5). p.509-511
Abstract
Two 60-GHz band voltage controlled oscillators (VCOs) designed in a 28-nm ultrathin body and buried oxide fully depleted silicon on insulator (UTBB FD-SOI) CMOS process are demonstrated and compared. Both VCOs have identical cross-coupled nMOS cores and dissipate 3.15 mW from a 0.9-V supply. The first design uses a standard FET current source and achieves a figure of merit (FOM) of −181 dBc/Hz, whereas the second employs a filtered current source and achieves a state-of-the-art FOM of −187 dBc/Hz. The achieved 6-dB improvement demonstrates the efficiency of the filtering technique at millimeter wave frequencies and the feasibility of efficient low-phase noise designs in 28-nm UTBB FD-SOI CMOS. The active area of the filtered VCO is... (More)
Two 60-GHz band voltage controlled oscillators (VCOs) designed in a 28-nm ultrathin body and buried oxide fully depleted silicon on insulator (UTBB FD-SOI) CMOS process are demonstrated and compared. Both VCOs have identical cross-coupled nMOS cores and dissipate 3.15 mW from a 0.9-V supply. The first design uses a standard FET current source and achieves a figure of merit (FOM) of −181 dBc/Hz, whereas the second employs a filtered current source and achieves a state-of-the-art FOM of −187 dBc/Hz. The achieved 6-dB improvement demonstrates the efficiency of the filtering technique at millimeter wave frequencies and the feasibility of efficient low-phase noise designs in 28-nm UTBB FD-SOI CMOS. The active area of the filtered VCO is
90μm×180μm and the standard VCO has an area of 80μm×110μm. (Less)
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organization
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type
Contribution to journal
publication status
published
subject
in
IEEE Microwave and Wireless Components Letters
volume
27
issue
5
pages
3 pages
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85017762108
ISSN
1531-1309
DOI
10.1109/LMWC.2017.2690845
language
English
LU publication?
yes
id
082abb26-682e-45e9-9579-6978818d327e
date added to LUP
2017-05-09 10:57:53
date last changed
2017-05-10 04:00:44
@article{082abb26-682e-45e9-9579-6978818d327e,
  abstract     = {Two 60-GHz band voltage controlled oscillators (VCOs) designed in a 28-nm ultrathin body and buried oxide fully depleted silicon on insulator (UTBB FD-SOI) CMOS process are demonstrated and compared. Both VCOs have identical cross-coupled nMOS cores and dissipate 3.15 mW from a 0.9-V supply. The first design uses a standard FET current source and achieves a figure of merit (FOM) of −181 dBc/Hz, whereas the second employs a filtered current source and achieves a state-of-the-art FOM of −187 dBc/Hz. The achieved 6-dB improvement demonstrates the efficiency of the filtering technique at millimeter wave frequencies and the feasibility of efficient low-phase noise designs in 28-nm UTBB FD-SOI CMOS. The active area of the filtered VCO is <br/>90μm×180μm and the standard VCO has an area of 80μm×110μm.},
  author       = {Forsberg, Therese and Wernehag, Johan and Nejdel, Anders and Sjöland, Henrik and Törmänen, Markus},
  issn         = {1531-1309},
  language     = {eng},
  month        = {04},
  number       = {5},
  pages        = {509--511},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Microwave and Wireless Components Letters},
  title        = {Two mm-Wave VCOs in 28-nm UTBB FD-SOI CMOS},
  url          = {http://dx.doi.org/10.1109/LMWC.2017.2690845 },
  volume       = {27},
  year         = {2017},
}