Two mm-Wave VCOs in 28-nm UTBB FD-SOI CMOS
Forsberg, Therese LU ; Wernehag, Johan LU ; Nejdel, Anders LU ; Sjöland, Henrik LU
and Törmänen, Markus
LU
(2017)
In IEEE Microwave and Wireless Components Letters
27(5).
p.509-511
- Abstract
- Two 60-GHz band voltage controlled oscillators (VCOs) designed in a 28-nm ultrathin body and buried oxide fully depleted silicon on insulator (UTBB FD-SOI) CMOS process are demonstrated and compared. Both VCOs have identical cross-coupled nMOS cores and dissipate 3.15 mW from a 0.9-V supply. The first design uses a standard FET current source and achieves a figure of merit (FOM) of −181 dBc/Hz, whereas the second employs a filtered current source and achieves a state-of-the-art FOM of −187 dBc/Hz. The achieved 6-dB improvement demonstrates the efficiency of the filtering technique at millimeter wave frequencies and the feasibility of efficient low-phase noise designs in 28-nm UTBB FD-SOI CMOS. The active area of the filtered VCO is... (More)
- Two 60-GHz band voltage controlled oscillators (VCOs) designed in a 28-nm ultrathin body and buried oxide fully depleted silicon on insulator (UTBB FD-SOI) CMOS process are demonstrated and compared. Both VCOs have identical cross-coupled nMOS cores and dissipate 3.15 mW from a 0.9-V supply. The first design uses a standard FET current source and achieves a figure of merit (FOM) of −181 dBc/Hz, whereas the second employs a filtered current source and achieves a state-of-the-art FOM of −187 dBc/Hz. The achieved 6-dB improvement demonstrates the efficiency of the filtering technique at millimeter wave frequencies and the feasibility of efficient low-phase noise designs in 28-nm UTBB FD-SOI CMOS. The active area of the filtered VCO is
90μm×180μm and the standard VCO has an area of 80μm×110μm. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/082abb26-682e-45e9-9579-6978818d327e
- author
- Forsberg, Therese
LU
; Wernehag, Johan
LU
; Nejdel, Anders
LU
; Sjöland, Henrik
LU
and Törmänen, Markus
LU
- organization
- publishing date
- 2017-04-19
- type
- Contribution to journal
- publication status
- published
- subject
- in
- IEEE Microwave and Wireless Components Letters
- volume
- 27
- issue
- 5
- pages
- 3 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000401078400029
- scopus:85018630714
- ISSN
- 1531-1309
- DOI
- 10.1109/LMWC.2017.2690845
- language
- English
- LU publication?
- yes
- id
- 082abb26-682e-45e9-9579-6978818d327e
- date added to LUP
- 2017-05-09 10:57:53
- date last changed
- 2024-02-12 18:31:58
@article{082abb26-682e-45e9-9579-6978818d327e,
abstract = {{Two 60-GHz band voltage controlled oscillators (VCOs) designed in a 28-nm ultrathin body and buried oxide fully depleted silicon on insulator (UTBB FD-SOI) CMOS process are demonstrated and compared. Both VCOs have identical cross-coupled nMOS cores and dissipate 3.15 mW from a 0.9-V supply. The first design uses a standard FET current source and achieves a figure of merit (FOM) of −181 dBc/Hz, whereas the second employs a filtered current source and achieves a state-of-the-art FOM of −187 dBc/Hz. The achieved 6-dB improvement demonstrates the efficiency of the filtering technique at millimeter wave frequencies and the feasibility of efficient low-phase noise designs in 28-nm UTBB FD-SOI CMOS. The active area of the filtered VCO is <br/>90μm×180μm and the standard VCO has an area of 80μm×110μm.}},
author = {{Forsberg, Therese and Wernehag, Johan and Nejdel, Anders and Sjöland, Henrik and Törmänen, Markus}},
issn = {{1531-1309}},
language = {{eng}},
month = {{04}},
number = {{5}},
pages = {{509--511}},
publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
series = {{IEEE Microwave and Wireless Components Letters}},
title = {{Two mm-Wave VCOs in 28-nm UTBB FD-SOI CMOS}},
url = {{http://dx.doi.org/10.1109/LMWC.2017.2690845}},
doi = {{10.1109/LMWC.2017.2690845}},
volume = {{27}},
year = {{2017}},
}