Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-kappa dielectric
(2010) In Applied Physics Letters 96(16).- Abstract
- A gate-defined double quantum dot with two integrated quantum point contact charge sensors is realized in an InGaAs/InP heterostructure by employing a high-kappa HfO2 thin film as gate dielectric and a polymer bridge technique. Clear honeycomb patterns are observed in the measured charge stability diagram of the double quantum dot and charge sensing signals of the quantum point contacts. It is also found that the quantum point contact charge sensors can detect the charge states in the double quantum dot even in the condition that the direct transport signal is not visible. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3409223]
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1601894
- author
- Sun, Jie LU ; Larsson, Marcus LU ; Maximov, Ivan LU and Xu, Hongqi LU
- organization
- publishing date
- 2010
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 96
- issue
- 16
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000277020600022
- scopus:77951805865
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3409223
- language
- English
- LU publication?
- yes
- id
- 0aa7de5d-7dd0-41a0-b108-bc9f8be0b6e8 (old id 1601894)
- date added to LUP
- 2016-04-01 11:01:08
- date last changed
- 2023-09-28 19:39:53
@article{0aa7de5d-7dd0-41a0-b108-bc9f8be0b6e8, abstract = {{A gate-defined double quantum dot with two integrated quantum point contact charge sensors is realized in an InGaAs/InP heterostructure by employing a high-kappa HfO2 thin film as gate dielectric and a polymer bridge technique. Clear honeycomb patterns are observed in the measured charge stability diagram of the double quantum dot and charge sensing signals of the quantum point contacts. It is also found that the quantum point contact charge sensors can detect the charge states in the double quantum dot even in the condition that the direct transport signal is not visible. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3409223]}}, author = {{Sun, Jie and Larsson, Marcus and Maximov, Ivan and Xu, Hongqi}}, issn = {{0003-6951}}, language = {{eng}}, number = {{16}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-kappa dielectric}}, url = {{http://dx.doi.org/10.1063/1.3409223}}, doi = {{10.1063/1.3409223}}, volume = {{96}}, year = {{2010}}, }