Nonlinear electrical properties of Si three-terminal junction devices
Meng, Fantao ; Sun, Jie LU ; Graczyk, Mariusz LU ; Zhang, Kailiang ; Prunnila, Mika ; Ahopelto, Jouni ; Shi, Peixiong ; Chu, Jinkui ; Maximov, Ivan LU
and Xu, Hongqi
LU
(2010)
In Applied Physics Letters
97(24).
- Abstract
- This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics. (C) 2010 American Institute of Physics. [doi:10.1063/1.3526725]
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1831254
- author
- Meng, Fantao
; Sun, Jie
LU
; Graczyk, Mariusz
LU
; Zhang, Kailiang
; Prunnila, Mika
; Ahopelto, Jouni
; Shi, Peixiong
; Chu, Jinkui
; Maximov, Ivan
LU
and Xu, Hongqi
LU
- organization
- publishing date
- 2010
- type
- Contribution to journal
- publication status
- published
- in
- Applied Physics Letters
- volume
- 97
- issue
- 24
- article number
- 242106
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000285481000031
- scopus:78650376760
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3526725
- language
- English
- LU publication?
- yes
- id
- 0ab4acf6-d38f-49f9-bda3-121030efbb9a (old id 1831254)
- date added to LUP
- 2016-04-01 09:50:07
- date last changed
- 2025-04-03 17:08:08
@article{0ab4acf6-d38f-49f9-bda3-121030efbb9a,
abstract = {{This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics. (C) 2010 American Institute of Physics. [doi:10.1063/1.3526725]}},
author = {{Meng, Fantao and Sun, Jie and Graczyk, Mariusz and Zhang, Kailiang and Prunnila, Mika and Ahopelto, Jouni and Shi, Peixiong and Chu, Jinkui and Maximov, Ivan and Xu, Hongqi}},
issn = {{0003-6951}},
language = {{eng}},
number = {{24}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Nonlinear electrical properties of Si three-terminal junction devices}},
url = {{http://dx.doi.org/10.1063/1.3526725}},
doi = {{10.1063/1.3526725}},
volume = {{97}},
year = {{2010}},
}