Raman characterization of single-crystalline Ga0.96Mn0.04As:Zn nanowires realized by ion-implantation
(2019) In Nanotechnology 30(33).- Abstract
Recent progress in the realization of magnetic GaAs nanowires (NWs) doped with Mn has attracted a lot of attention due to their potential application in spintronics. In this work, we present a detailed Raman investigation of the structural properties of Zn doped GaAs (GaAs:Zn) and Mn-implanted GaAs:Zn (Ga0.96Mn0.04As:Zn) NWs. A significant broadening and redshift of the optical TO and LO phonon modes are observed for these NWs compared to as-grown undoped wires, which is attributed to strain induced by the Zn/Mn doping and to the presence of implantation-related defects. Moreover, the LO phonon modes are strongly damped, which is interpreted in terms of a strong LO phonon-plasmon coupling, induced by the free hole... (More)
Recent progress in the realization of magnetic GaAs nanowires (NWs) doped with Mn has attracted a lot of attention due to their potential application in spintronics. In this work, we present a detailed Raman investigation of the structural properties of Zn doped GaAs (GaAs:Zn) and Mn-implanted GaAs:Zn (Ga0.96Mn0.04As:Zn) NWs. A significant broadening and redshift of the optical TO and LO phonon modes are observed for these NWs compared to as-grown undoped wires, which is attributed to strain induced by the Zn/Mn doping and to the presence of implantation-related defects. Moreover, the LO phonon modes are strongly damped, which is interpreted in terms of a strong LO phonon-plasmon coupling, induced by the free hole concentration. Moreover, we report on two new interesting Raman phonon modes (191 and 252 cm-1) observed in Mn ion-implanted NWs, which we attribute to Eg (TO) and A1g (LO) vibrational modes in a sheet layer of crystalline arsenic present on the surface of the NWs. This conclusion is supported by fitting the observed Raman shifts for the SO phonon modes to a theoretical dispersion function for a GaAs NW capped with a dielectric shell.
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- author
- Corrêa, Gregório B. ; Kumar, Sandeep LU ; Paschoal, Waldomiro LU ; Devi, Chandni ; Jacobsson, Daniel LU ; Johannes, Andreas ; Ronning, Carsten ; Pettersson, Hakan LU and Paraguassu, Waldeci
- organization
- publishing date
- 2019-05-22
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Mn ion implantation, nanowires, Raman spectroscopy, spintronics, surface optical phonons
- in
- Nanotechnology
- volume
- 30
- issue
- 33
- article number
- 335202
- publisher
- IOP Publishing
- external identifiers
-
- pmid:31018190
- scopus:85067269466
- ISSN
- 0957-4484
- DOI
- 10.1088/1361-6528/ab1bea
- language
- English
- LU publication?
- yes
- id
- 0c2e7826-38be-4a2f-a729-c713858e414d
- date added to LUP
- 2020-01-20 10:07:29
- date last changed
- 2024-08-21 14:54:38
@article{0c2e7826-38be-4a2f-a729-c713858e414d, abstract = {{<p>Recent progress in the realization of magnetic GaAs nanowires (NWs) doped with Mn has attracted a lot of attention due to their potential application in spintronics. In this work, we present a detailed Raman investigation of the structural properties of Zn doped GaAs (GaAs:Zn) and Mn-implanted GaAs:Zn (Ga<sub>0.96</sub>Mn<sub>0.04</sub>As:Zn) NWs. A significant broadening and redshift of the optical TO and LO phonon modes are observed for these NWs compared to as-grown undoped wires, which is attributed to strain induced by the Zn/Mn doping and to the presence of implantation-related defects. Moreover, the LO phonon modes are strongly damped, which is interpreted in terms of a strong LO phonon-plasmon coupling, induced by the free hole concentration. Moreover, we report on two new interesting Raman phonon modes (191 and 252 cm<sup>-1</sup>) observed in Mn ion-implanted NWs, which we attribute to E<sub>g</sub> (TO) and A<sub>1g</sub> (LO) vibrational modes in a sheet layer of crystalline arsenic present on the surface of the NWs. This conclusion is supported by fitting the observed Raman shifts for the SO phonon modes to a theoretical dispersion function for a GaAs NW capped with a dielectric shell.</p>}}, author = {{Corrêa, Gregório B. and Kumar, Sandeep and Paschoal, Waldomiro and Devi, Chandni and Jacobsson, Daniel and Johannes, Andreas and Ronning, Carsten and Pettersson, Hakan and Paraguassu, Waldeci}}, issn = {{0957-4484}}, keywords = {{Mn ion implantation; nanowires; Raman spectroscopy; spintronics; surface optical phonons}}, language = {{eng}}, month = {{05}}, number = {{33}}, publisher = {{IOP Publishing}}, series = {{Nanotechnology}}, title = {{Raman characterization of single-crystalline Ga<sub>0.96</sub>Mn<sub>0.04</sub>As:Zn nanowires realized by ion-implantation}}, url = {{http://dx.doi.org/10.1088/1361-6528/ab1bea}}, doi = {{10.1088/1361-6528/ab1bea}}, volume = {{30}}, year = {{2019}}, }