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Raman characterization of single-crystalline Ga0.96Mn0.04As:Zn nanowires realized by ion-implantation

Corrêa, Gregório B. ; Kumar, Sandeep LU ; Paschoal, Waldomiro LU ; Devi, Chandni ; Jacobsson, Daniel LU ; Johannes, Andreas ; Ronning, Carsten ; Pettersson, Hakan LU and Paraguassu, Waldeci (2019) In Nanotechnology 30(33).
Abstract

Recent progress in the realization of magnetic GaAs nanowires (NWs) doped with Mn has attracted a lot of attention due to their potential application in spintronics. In this work, we present a detailed Raman investigation of the structural properties of Zn doped GaAs (GaAs:Zn) and Mn-implanted GaAs:Zn (Ga0.96Mn0.04As:Zn) NWs. A significant broadening and redshift of the optical TO and LO phonon modes are observed for these NWs compared to as-grown undoped wires, which is attributed to strain induced by the Zn/Mn doping and to the presence of implantation-related defects. Moreover, the LO phonon modes are strongly damped, which is interpreted in terms of a strong LO phonon-plasmon coupling, induced by the free hole... (More)

Recent progress in the realization of magnetic GaAs nanowires (NWs) doped with Mn has attracted a lot of attention due to their potential application in spintronics. In this work, we present a detailed Raman investigation of the structural properties of Zn doped GaAs (GaAs:Zn) and Mn-implanted GaAs:Zn (Ga0.96Mn0.04As:Zn) NWs. A significant broadening and redshift of the optical TO and LO phonon modes are observed for these NWs compared to as-grown undoped wires, which is attributed to strain induced by the Zn/Mn doping and to the presence of implantation-related defects. Moreover, the LO phonon modes are strongly damped, which is interpreted in terms of a strong LO phonon-plasmon coupling, induced by the free hole concentration. Moreover, we report on two new interesting Raman phonon modes (191 and 252 cm-1) observed in Mn ion-implanted NWs, which we attribute to Eg (TO) and A1g (LO) vibrational modes in a sheet layer of crystalline arsenic present on the surface of the NWs. This conclusion is supported by fitting the observed Raman shifts for the SO phonon modes to a theoretical dispersion function for a GaAs NW capped with a dielectric shell.

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author
; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Mn ion implantation, nanowires, Raman spectroscopy, spintronics, surface optical phonons
in
Nanotechnology
volume
30
issue
33
article number
335202
publisher
IOP Publishing
external identifiers
  • scopus:85067269466
  • pmid:31018190
ISSN
0957-4484
DOI
10.1088/1361-6528/ab1bea
language
English
LU publication?
yes
id
0c2e7826-38be-4a2f-a729-c713858e414d
date added to LUP
2020-01-20 10:07:29
date last changed
2024-05-29 07:22:15
@article{0c2e7826-38be-4a2f-a729-c713858e414d,
  abstract     = {{<p>Recent progress in the realization of magnetic GaAs nanowires (NWs) doped with Mn has attracted a lot of attention due to their potential application in spintronics. In this work, we present a detailed Raman investigation of the structural properties of Zn doped GaAs (GaAs:Zn) and Mn-implanted GaAs:Zn (Ga<sub>0.96</sub>Mn<sub>0.04</sub>As:Zn) NWs. A significant broadening and redshift of the optical TO and LO phonon modes are observed for these NWs compared to as-grown undoped wires, which is attributed to strain induced by the Zn/Mn doping and to the presence of implantation-related defects. Moreover, the LO phonon modes are strongly damped, which is interpreted in terms of a strong LO phonon-plasmon coupling, induced by the free hole concentration. Moreover, we report on two new interesting Raman phonon modes (191 and 252 cm<sup>-1</sup>) observed in Mn ion-implanted NWs, which we attribute to E<sub>g</sub> (TO) and A<sub>1g</sub> (LO) vibrational modes in a sheet layer of crystalline arsenic present on the surface of the NWs. This conclusion is supported by fitting the observed Raman shifts for the SO phonon modes to a theoretical dispersion function for a GaAs NW capped with a dielectric shell.</p>}},
  author       = {{Corrêa, Gregório B. and Kumar, Sandeep and Paschoal, Waldomiro and Devi, Chandni and Jacobsson, Daniel and Johannes, Andreas and Ronning, Carsten and Pettersson, Hakan and Paraguassu, Waldeci}},
  issn         = {{0957-4484}},
  keywords     = {{Mn ion implantation; nanowires; Raman spectroscopy; spintronics; surface optical phonons}},
  language     = {{eng}},
  month        = {{05}},
  number       = {{33}},
  publisher    = {{IOP Publishing}},
  series       = {{Nanotechnology}},
  title        = {{Raman characterization of single-crystalline Ga<sub>0.96</sub>Mn<sub>0.04</sub>As:Zn nanowires realized by ion-implantation}},
  url          = {{http://dx.doi.org/10.1088/1361-6528/ab1bea}},
  doi          = {{10.1088/1361-6528/ab1bea}},
  volume       = {{30}},
  year         = {{2019}},
}