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Epitaxial Graphene Growth on the Step-Structured Surface of Off-Axis C-Face 3C-SiC(1¯1¯1¯)

Shi, Yuchen ; Zakharov, Alexei A. LU ; Ivanov, Ivan Gueorguiev ; Yazdi, Gholamreza ; Syväjärvi, Mikael ; Yakimova, Rositsa and Sun, Jianwu (2020) In Physica Status Solidi (B) Basic Research 257(6).
Abstract

Graphene layers grown on the C-face SiC exhibit quite different structural and electronic properties compared with those grown on the Si-face SiC. Herein, the growth and structural properties of graphene on the off-axis C-face 3C-SiC((Formula presented.)) are studied. The as-grown 4° off-axis 3C-SiC((Formula presented.)) exhibits highly periodic steps with step height of ≈0.75 nm and terrace width of ≈50 nm. After annealing at 1800 °C under 850 mbar argon atmosphere, relatively uniform large graphene domains can be grown. The low-energy electron microscopy (LEEM) results demonstrate that one monolayer (ML) to four-ML graphene domains are grown over several micrometers square, which enables us to measure micro low-energy electron... (More)

Graphene layers grown on the C-face SiC exhibit quite different structural and electronic properties compared with those grown on the Si-face SiC. Herein, the growth and structural properties of graphene on the off-axis C-face 3C-SiC((Formula presented.)) are studied. The as-grown 4° off-axis 3C-SiC((Formula presented.)) exhibits highly periodic steps with step height of ≈0.75 nm and terrace width of ≈50 nm. After annealing at 1800 °C under 850 mbar argon atmosphere, relatively uniform large graphene domains can be grown. The low-energy electron microscopy (LEEM) results demonstrate that one monolayer (ML) to four-ML graphene domains are grown over several micrometers square, which enables us to measure micro low-energy electron diffraction (μ-LEED) on the single graphene domain. The μ-LEED pattern collected on the monolayer domain mainly exhibits four sets of graphene (1 × 1) spots, indicating the presence of graphene grains with different azimuthal orientations in the same graphene sheet. Raman spectra collected on the graphene domains show rather small D peaks, indicating the presence of less defects and higher crystalline quality of the graphene layers grown on the C-face off-axis 3C-SiC((Formula presented.)).

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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
azimuthal orientations, C-face 3C-SiC, epitaxial graphene, off-axis substrates
in
Physica Status Solidi (B) Basic Research
volume
257
issue
6
article number
1900718
publisher
John Wiley & Sons Inc.
external identifiers
  • scopus:85082552458
ISSN
0370-1972
DOI
10.1002/pssb.201900718
language
English
LU publication?
yes
id
0e6a866a-410d-4341-8262-47cabbc08ea9
date added to LUP
2021-01-14 09:19:58
date last changed
2022-04-26 23:34:54
@article{0e6a866a-410d-4341-8262-47cabbc08ea9,
  abstract     = {{<p>Graphene layers grown on the C-face SiC exhibit quite different structural and electronic properties compared with those grown on the Si-face SiC. Herein, the growth and structural properties of graphene on the off-axis C-face 3C-SiC((Formula presented.)) are studied. The as-grown 4° off-axis 3C-SiC((Formula presented.)) exhibits highly periodic steps with step height of ≈0.75 nm and terrace width of ≈50 nm. After annealing at 1800 °C under 850 mbar argon atmosphere, relatively uniform large graphene domains can be grown. The low-energy electron microscopy (LEEM) results demonstrate that one monolayer (ML) to four-ML graphene domains are grown over several micrometers square, which enables us to measure micro low-energy electron diffraction (μ-LEED) on the single graphene domain. The μ-LEED pattern collected on the monolayer domain mainly exhibits four sets of graphene (1 × 1) spots, indicating the presence of graphene grains with different azimuthal orientations in the same graphene sheet. Raman spectra collected on the graphene domains show rather small D peaks, indicating the presence of less defects and higher crystalline quality of the graphene layers grown on the C-face off-axis 3C-SiC((Formula presented.)).</p>}},
  author       = {{Shi, Yuchen and Zakharov, Alexei A. and Ivanov, Ivan Gueorguiev and Yazdi, Gholamreza and Syväjärvi, Mikael and Yakimova, Rositsa and Sun, Jianwu}},
  issn         = {{0370-1972}},
  keywords     = {{azimuthal orientations; C-face 3C-SiC; epitaxial graphene; off-axis substrates}},
  language     = {{eng}},
  month        = {{06}},
  number       = {{6}},
  publisher    = {{John Wiley & Sons Inc.}},
  series       = {{Physica Status Solidi (B) Basic Research}},
  title        = {{Epitaxial Graphene Growth on the Step-Structured Surface of Off-Axis C-Face 3C-SiC(1¯1¯1¯)}},
  url          = {{http://dx.doi.org/10.1002/pssb.201900718}},
  doi          = {{10.1002/pssb.201900718}},
  volume       = {{257}},
  year         = {{2020}},
}