Epitaxial Graphene Growth on the Step-Structured Surface of Off-Axis C-Face 3C-SiC(1¯1¯1¯)
(2020) In Physica Status Solidi (B) Basic Research 257(6).- Abstract
Graphene layers grown on the C-face SiC exhibit quite different structural and electronic properties compared with those grown on the Si-face SiC. Herein, the growth and structural properties of graphene on the off-axis C-face 3C-SiC((Formula presented.)) are studied. The as-grown 4° off-axis 3C-SiC((Formula presented.)) exhibits highly periodic steps with step height of ≈0.75 nm and terrace width of ≈50 nm. After annealing at 1800 °C under 850 mbar argon atmosphere, relatively uniform large graphene domains can be grown. The low-energy electron microscopy (LEEM) results demonstrate that one monolayer (ML) to four-ML graphene domains are grown over several micrometers square, which enables us to measure micro low-energy electron... (More)
Graphene layers grown on the C-face SiC exhibit quite different structural and electronic properties compared with those grown on the Si-face SiC. Herein, the growth and structural properties of graphene on the off-axis C-face 3C-SiC((Formula presented.)) are studied. The as-grown 4° off-axis 3C-SiC((Formula presented.)) exhibits highly periodic steps with step height of ≈0.75 nm and terrace width of ≈50 nm. After annealing at 1800 °C under 850 mbar argon atmosphere, relatively uniform large graphene domains can be grown. The low-energy electron microscopy (LEEM) results demonstrate that one monolayer (ML) to four-ML graphene domains are grown over several micrometers square, which enables us to measure micro low-energy electron diffraction (μ-LEED) on the single graphene domain. The μ-LEED pattern collected on the monolayer domain mainly exhibits four sets of graphene (1 × 1) spots, indicating the presence of graphene grains with different azimuthal orientations in the same graphene sheet. Raman spectra collected on the graphene domains show rather small D peaks, indicating the presence of less defects and higher crystalline quality of the graphene layers grown on the C-face off-axis 3C-SiC((Formula presented.)).
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- author
- Shi, Yuchen ; Zakharov, Alexei A. LU ; Ivanov, Ivan Gueorguiev ; Yazdi, Gholamreza ; Syväjärvi, Mikael ; Yakimova, Rositsa and Sun, Jianwu
- organization
- publishing date
- 2020-06-01
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- azimuthal orientations, C-face 3C-SiC, epitaxial graphene, off-axis substrates
- in
- Physica Status Solidi (B) Basic Research
- volume
- 257
- issue
- 6
- article number
- 1900718
- publisher
- John Wiley & Sons Inc.
- external identifiers
-
- scopus:85082552458
- ISSN
- 0370-1972
- DOI
- 10.1002/pssb.201900718
- language
- English
- LU publication?
- yes
- id
- 0e6a866a-410d-4341-8262-47cabbc08ea9
- date added to LUP
- 2021-01-14 09:19:58
- date last changed
- 2022-04-26 23:34:54
@article{0e6a866a-410d-4341-8262-47cabbc08ea9, abstract = {{<p>Graphene layers grown on the C-face SiC exhibit quite different structural and electronic properties compared with those grown on the Si-face SiC. Herein, the growth and structural properties of graphene on the off-axis C-face 3C-SiC((Formula presented.)) are studied. The as-grown 4° off-axis 3C-SiC((Formula presented.)) exhibits highly periodic steps with step height of ≈0.75 nm and terrace width of ≈50 nm. After annealing at 1800 °C under 850 mbar argon atmosphere, relatively uniform large graphene domains can be grown. The low-energy electron microscopy (LEEM) results demonstrate that one monolayer (ML) to four-ML graphene domains are grown over several micrometers square, which enables us to measure micro low-energy electron diffraction (μ-LEED) on the single graphene domain. The μ-LEED pattern collected on the monolayer domain mainly exhibits four sets of graphene (1 × 1) spots, indicating the presence of graphene grains with different azimuthal orientations in the same graphene sheet. Raman spectra collected on the graphene domains show rather small D peaks, indicating the presence of less defects and higher crystalline quality of the graphene layers grown on the C-face off-axis 3C-SiC((Formula presented.)).</p>}}, author = {{Shi, Yuchen and Zakharov, Alexei A. and Ivanov, Ivan Gueorguiev and Yazdi, Gholamreza and Syväjärvi, Mikael and Yakimova, Rositsa and Sun, Jianwu}}, issn = {{0370-1972}}, keywords = {{azimuthal orientations; C-face 3C-SiC; epitaxial graphene; off-axis substrates}}, language = {{eng}}, month = {{06}}, number = {{6}}, publisher = {{John Wiley & Sons Inc.}}, series = {{Physica Status Solidi (B) Basic Research}}, title = {{Epitaxial Graphene Growth on the Step-Structured Surface of Off-Axis C-Face 3C-SiC(1¯1¯1¯)}}, url = {{http://dx.doi.org/10.1002/pssb.201900718}}, doi = {{10.1002/pssb.201900718}}, volume = {{257}}, year = {{2020}}, }