Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Defect engineering in Czochralski silicon by electron irradiation at different temperatures

Lindström, J L ; Murin, LI ; Hallberg, T ; Markevich, VP ; Svensson, BG ; Kleverman, Mats LU and Hermansson, J (2002) E-MRS 2001 Spring Meeting Symposium B Defect Engineering of Advanced Semiconductor Devices 186(1). p.121-125
Abstract
Infrared absorption studies of defect formation in Czochralski silicon irradiated with fast electrons in a wide range of temperatures (80-900 K) have been performed. The samples with different contents of oxygen (O-16, O-18) and carbon (C-12, C-13) isotopes were investigated, The main defect reactions are found to depend strongly on irradiation temperature and dose, as well as on impurity content and pre-history of the samples. Some new radiation-induced defects are revealed after irradiation at elevated temperatures as well as after a two-step (hot + room-temperature (RT)) irradiation.
Please use this url to cite or link to this publication:
author
; ; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
carbon, defects, electron irradiation, silicon, oxygen
host publication
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
volume
186
issue
1
pages
121 - 125
publisher
Elsevier
conference name
E-MRS 2001 Spring Meeting Symposium B Defect Engineering of Advanced Semiconductor Devices
conference location
Strasbourg, France
conference dates
2001-06-04 - 2001-06-08
external identifiers
  • wos:000173279900021
  • scopus:0036135055
ISSN
0168-583X
DOI
10.1016/S0168-583X(01)00871-0
language
English
LU publication?
yes
id
0ea0aab5-d580-4d87-839f-0c580ce7361f (old id 345747)
date added to LUP
2016-04-01 15:57:52
date last changed
2022-01-28 08:22:24
@inproceedings{0ea0aab5-d580-4d87-839f-0c580ce7361f,
  abstract     = {{Infrared absorption studies of defect formation in Czochralski silicon irradiated with fast electrons in a wide range of temperatures (80-900 K) have been performed. The samples with different contents of oxygen (O-16, O-18) and carbon (C-12, C-13) isotopes were investigated, The main defect reactions are found to depend strongly on irradiation temperature and dose, as well as on impurity content and pre-history of the samples. Some new radiation-induced defects are revealed after irradiation at elevated temperatures as well as after a two-step (hot + room-temperature (RT)) irradiation.}},
  author       = {{Lindström, J L and Murin, LI and Hallberg, T and Markevich, VP and Svensson, BG and Kleverman, Mats and Hermansson, J}},
  booktitle    = {{Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}},
  issn         = {{0168-583X}},
  keywords     = {{carbon; defects; electron irradiation; silicon; oxygen}},
  language     = {{eng}},
  number       = {{1}},
  pages        = {{121--125}},
  publisher    = {{Elsevier}},
  title        = {{Defect engineering in Czochralski silicon by electron irradiation at different temperatures}},
  url          = {{http://dx.doi.org/10.1016/S0168-583X(01)00871-0}},
  doi          = {{10.1016/S0168-583X(01)00871-0}},
  volume       = {{186}},
  year         = {{2002}},
}