Si(100)2 × 1: the clean and ammonia exposed surface studied with high resolution core-level spectroscopy
(1992) In Surface Science 271(3). p.349-354- Abstract
- High resolution core-level spectroscopy was utilized to study the clean and NH3 exposed Si(100)2×1 surface. The clean surface exhibits two approximately equal intensity surface core-level components at −0.48 and 0.28 eV binding energy referred to the bulk component. NH3 exposure at 300 K induces two surface core-level components at 0.31 and 0.72 eV relative binding energy that can be assigned to surface Si atoms bonded to H and NH2, respectively. Alternative interpretations for the adsorption based on different interpretations of the clean surface core-level spectra are discussed. The steps between adsorption at 300 K and the beginning of subsurface silicon nitride formation by annealing the surface up to 1000 K are investigated.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1056517
- author
- Larsson, Christer LU ; Andersson, Caijsa ; Prince, Nicholas and Flodström, Anders
- organization
- publishing date
- 1992
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Surface Science
- volume
- 271
- issue
- 3
- pages
- 349 - 354
- publisher
- Elsevier
- external identifiers
-
- scopus:0026881859
- ISSN
- 0039-6028
- DOI
- 10.1016/0039-6028(92)90899-H
- language
- English
- LU publication?
- no
- id
- e469c5e9-5c65-48e9-b60d-846a2aecd2b0 (old id 1056517)
- date added to LUP
- 2016-04-01 16:18:19
- date last changed
- 2021-01-03 09:51:06
@article{e469c5e9-5c65-48e9-b60d-846a2aecd2b0, abstract = {{High resolution core-level spectroscopy was utilized to study the clean and NH3 exposed Si(100)2×1 surface. The clean surface exhibits two approximately equal intensity surface core-level components at −0.48 and 0.28 eV binding energy referred to the bulk component. NH3 exposure at 300 K induces two surface core-level components at 0.31 and 0.72 eV relative binding energy that can be assigned to surface Si atoms bonded to H and NH2, respectively. Alternative interpretations for the adsorption based on different interpretations of the clean surface core-level spectra are discussed. The steps between adsorption at 300 K and the beginning of subsurface silicon nitride formation by annealing the surface up to 1000 K are investigated.}}, author = {{Larsson, Christer and Andersson, Caijsa and Prince, Nicholas and Flodström, Anders}}, issn = {{0039-6028}}, language = {{eng}}, number = {{3}}, pages = {{349--354}}, publisher = {{Elsevier}}, series = {{Surface Science}}, title = {{Si(100)2 × 1: the clean and ammonia exposed surface studied with high resolution core-level spectroscopy}}, url = {{http://dx.doi.org/10.1016/0039-6028(92)90899-H}}, doi = {{10.1016/0039-6028(92)90899-H}}, volume = {{271}}, year = {{1992}}, }