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Evidence of stacking-fault distribution along an InAs nanowire using micro-focused coherent X-ray diffraction

Chamard, Virginie; Stangl, Julian; Labat, Stephane; Mandl, Bernhard LU ; Lechner, Rainer T and Metzger, Till H (2008) In Journal of Applied Crystallography 41(Part 2). p.272-280
Abstract
InAs nanowire samples grown by metal-organic chemical vapor deposition present a significant amount of wurtzite structure, while the zincblende lattice is known to be the stable crystal structure for the bulk material. The question of the wurtzite distribution in the sample is addressed using phase-sensitive coherent X-ray diffraction with a micro-focused beam at a synchrotron source. The simultaneous investigation of the wurtzite 10 (1) over bar0, 10 (2) over bar0, 10 (3) over bar0 reflections performed on a bunch of single wires shows unambiguously that the wurtzite contribution is a result of stacking faults distributed along the wire. Additional simulations lead to adjustments of the wire structural parameters, such as the wurtzite... (More)
InAs nanowire samples grown by metal-organic chemical vapor deposition present a significant amount of wurtzite structure, while the zincblende lattice is known to be the stable crystal structure for the bulk material. The question of the wurtzite distribution in the sample is addressed using phase-sensitive coherent X-ray diffraction with a micro-focused beam at a synchrotron source. The simultaneous investigation of the wurtzite 10 (1) over bar0, 10 (2) over bar0, 10 (3) over bar0 reflections performed on a bunch of single wires shows unambiguously that the wurtzite contribution is a result of stacking faults distributed along the wire. Additional simulations lead to adjustments of the wire structural parameters, such as the wurtzite content, the strain distribution, the wire diameters and their respective orientations. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
stacking faults, InAs, nanowires, micro-focusing, coherent X-ray diffraction, synchrotron radiation
in
Journal of Applied Crystallography
volume
41
issue
Part 2
pages
272 - 280
publisher
Wiley-Blackwell
external identifiers
  • wos:000253992700005
  • scopus:40849094335
ISSN
1600-5767
DOI
10.1107/S0021889808001167
language
English
LU publication?
yes
id
2cbc4a6c-89bc-4166-865d-1194d17502d3 (old id 1186024)
date added to LUP
2008-09-03 12:14:39
date last changed
2017-07-30 03:32:54
@article{2cbc4a6c-89bc-4166-865d-1194d17502d3,
  abstract     = {InAs nanowire samples grown by metal-organic chemical vapor deposition present a significant amount of wurtzite structure, while the zincblende lattice is known to be the stable crystal structure for the bulk material. The question of the wurtzite distribution in the sample is addressed using phase-sensitive coherent X-ray diffraction with a micro-focused beam at a synchrotron source. The simultaneous investigation of the wurtzite 10 (1) over bar0, 10 (2) over bar0, 10 (3) over bar0 reflections performed on a bunch of single wires shows unambiguously that the wurtzite contribution is a result of stacking faults distributed along the wire. Additional simulations lead to adjustments of the wire structural parameters, such as the wurtzite content, the strain distribution, the wire diameters and their respective orientations.},
  author       = {Chamard, Virginie and Stangl, Julian and Labat, Stephane and Mandl, Bernhard and Lechner, Rainer T and Metzger, Till H},
  issn         = {1600-5767},
  keyword      = {stacking faults,InAs,nanowires,micro-focusing,coherent X-ray diffraction,synchrotron radiation},
  language     = {eng},
  number       = {Part 2},
  pages        = {272--280},
  publisher    = {Wiley-Blackwell},
  series       = {Journal of Applied Crystallography},
  title        = {Evidence of stacking-fault distribution along an InAs nanowire using micro-focused coherent X-ray diffraction},
  url          = {http://dx.doi.org/10.1107/S0021889808001167},
  volume       = {41},
  year         = {2008},
}