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Metal-dielectric transition in Sn-intercalated graphene on SiC(0001)

Niu, Y. R. LU ; Zakharov, A. A. LU and Yakimova, R (2017) In Ultramicroscopy
Abstract

The Sn intercalation into a buffer layer graphene grown on 4H-SiC(0001) substrate has been studied with spectroscopic photoemission and low energy electron microscope. Both SnSix and SnOx interfacial layers are found to form below the buffer layer, converting it into a quasi-free-standing monolayer graphene. Combining the various operation modes of the microscope allows a detailed insight into the formation processes of the interlayers and their thermal stability. In particular, at the interface we observed a reversible transition from silicide to oxide after exposure to ambient pressure and subsequent annealing. This metal-dielectric transition might be useful for interface engineering in graphene-based... (More)

The Sn intercalation into a buffer layer graphene grown on 4H-SiC(0001) substrate has been studied with spectroscopic photoemission and low energy electron microscope. Both SnSix and SnOx interfacial layers are found to form below the buffer layer, converting it into a quasi-free-standing monolayer graphene. Combining the various operation modes of the microscope allows a detailed insight into the formation processes of the interlayers and their thermal stability. In particular, at the interface we observed a reversible transition from silicide to oxide after exposure to ambient pressure and subsequent annealing. This metal-dielectric transition might be useful for interface engineering in graphene-based devices.

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author
organization
publishing date
type
Contribution to journal
publication status
epub
subject
in
Ultramicroscopy
publisher
Elsevier
external identifiers
  • scopus:85020103272
ISSN
0304-3991
DOI
10.1016/j.ultramic.2017.05.010
language
English
LU publication?
yes
id
11c8a2db-e29e-46b8-8adf-3d783402210a
date added to LUP
2017-07-03 08:53:28
date last changed
2017-07-04 03:00:12
@article{11c8a2db-e29e-46b8-8adf-3d783402210a,
  abstract     = {<p>The Sn intercalation into a buffer layer graphene grown on 4H-SiC(0001) substrate has been studied with spectroscopic photoemission and low energy electron microscope. Both SnSi<sub>x</sub> and SnO<sub>x</sub> interfacial layers are found to form below the buffer layer, converting it into a quasi-free-standing monolayer graphene. Combining the various operation modes of the microscope allows a detailed insight into the formation processes of the interlayers and their thermal stability. In particular, at the interface we observed a reversible transition from silicide to oxide after exposure to ambient pressure and subsequent annealing. This metal-dielectric transition might be useful for interface engineering in graphene-based devices.</p>},
  author       = {Niu, Y. R. and Zakharov, A. A. and Yakimova, R},
  issn         = {0304-3991},
  language     = {eng},
  month        = {05},
  publisher    = {Elsevier},
  series       = {Ultramicroscopy},
  title        = {Metal-dielectric transition in Sn-intercalated graphene on SiC(0001)},
  url          = {http://dx.doi.org/10.1016/j.ultramic.2017.05.010},
  year         = {2017},
}