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A highly tunable lateral quantum dot realized in InGaAs/InP by an etching technique

Larsson, Marcus LU ; Wallin, Daniel LU and Xu, Hongqi LU (2008) In Applied Physics Reviews 103(8). p.3-086101
Abstract
We report on the realization of a quantum dot in a modulation doped InGaAs/InP heterostructure by electron beam lithography and chemical wet etching. Using etched trench defined in-plane gates and a local top gate, the tunneling barriers, electron density, and electrostatic potential of the dot can be tuned. Electrical measurements reveal clear Coulomb blockade behavior of the electron transport through the dot and the behavior of electron tunneling through its excited states.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Reviews
volume
103
issue
8
pages
3 - 086101
publisher
American Institute of Physics
external identifiers
  • wos:000255456200185
  • scopus:43149107669
ISSN
0021-8979
DOI
10.1063/1.2905239
language
English
LU publication?
yes
id
2bca4ac6-e811-4d76-81f6-30ea17ce3817 (old id 1204667)
date added to LUP
2008-09-17 15:02:13
date last changed
2017-01-01 04:57:56
@article{2bca4ac6-e811-4d76-81f6-30ea17ce3817,
  abstract     = {We report on the realization of a quantum dot in a modulation doped InGaAs/InP heterostructure by electron beam lithography and chemical wet etching. Using etched trench defined in-plane gates and a local top gate, the tunneling barriers, electron density, and electrostatic potential of the dot can be tuned. Electrical measurements reveal clear Coulomb blockade behavior of the electron transport through the dot and the behavior of electron tunneling through its excited states.},
  author       = {Larsson, Marcus and Wallin, Daniel and Xu, Hongqi},
  issn         = {0021-8979},
  language     = {eng},
  number       = {8},
  pages        = {3--086101},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Reviews},
  title        = {A highly tunable lateral quantum dot realized in InGaAs/InP by an etching technique},
  url          = {http://dx.doi.org/10.1063/1.2905239},
  volume       = {103},
  year         = {2008},
}