A highly tunable lateral quantum dot realized in InGaAs/InP by an etching technique
(2008) In Applied Physics Reviews 103(8). p.3-086101- Abstract
- We report on the realization of a quantum dot in a modulation doped InGaAs/InP heterostructure by electron beam lithography and chemical wet etching. Using etched trench defined in-plane gates and a local top gate, the tunneling barriers, electron density, and electrostatic potential of the dot can be tuned. Electrical measurements reveal clear Coulomb blockade behavior of the electron transport through the dot and the behavior of electron tunneling through its excited states.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1204667
- author
- Larsson, Marcus LU ; Wallin, Daniel LU and Xu, Hongqi LU
- organization
- publishing date
- 2008
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Reviews
- volume
- 103
- issue
- 8
- pages
- 3 - 086101
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000255456200185
- scopus:43149107669
- ISSN
- 1931-9401
- DOI
- 10.1063/1.2905239
- language
- English
- LU publication?
- yes
- id
- 2bca4ac6-e811-4d76-81f6-30ea17ce3817 (old id 1204667)
- date added to LUP
- 2016-04-01 12:14:18
- date last changed
- 2022-01-27 00:49:43
@article{2bca4ac6-e811-4d76-81f6-30ea17ce3817, abstract = {{We report on the realization of a quantum dot in a modulation doped InGaAs/InP heterostructure by electron beam lithography and chemical wet etching. Using etched trench defined in-plane gates and a local top gate, the tunneling barriers, electron density, and electrostatic potential of the dot can be tuned. Electrical measurements reveal clear Coulomb blockade behavior of the electron transport through the dot and the behavior of electron tunneling through its excited states.}}, author = {{Larsson, Marcus and Wallin, Daniel and Xu, Hongqi}}, issn = {{1931-9401}}, language = {{eng}}, number = {{8}}, pages = {{3--086101}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Reviews}}, title = {{A highly tunable lateral quantum dot realized in InGaAs/InP by an etching technique}}, url = {{http://dx.doi.org/10.1063/1.2905239}}, doi = {{10.1063/1.2905239}}, volume = {{103}}, year = {{2008}}, }