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Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy

Riedl, C. ; Zakharov, Alexei LU and Starke, U. (2008) In Applied Physics Letters 93(3).
Abstract
We demonstrate an easy and practical method for the thickness analysis of epitaxial graphene on SiC(0001) that can be applied continuously during the preparation procedure. Fingerprints in the spot intensity spectra in low energy electron diffraction (LEED) allow for the exact determination of the number of layers for the first three graphene layers. The LEED data have been correlated with the electronic bandstructure around the (K) over bar -point of the graphene Brillouin zone as investigated by laboratory based angle resolved ultraviolet photoelectron spectroscopy using He II excitation. The morphology and homogeneity of the graphene layers can be analyzed by low energy electron microscopy. (C) 2008 American Institute of Physics.
Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
93
issue
3
article number
033106
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000257968700067
  • scopus:48249120427
ISSN
0003-6951
DOI
10.1063/1.2960341
language
English
LU publication?
yes
id
6b07911a-4282-4829-a04e-e87baf68ed20 (old id 1253811)
date added to LUP
2016-04-01 11:33:11
date last changed
2022-02-10 18:18:59
@article{6b07911a-4282-4829-a04e-e87baf68ed20,
  abstract     = {{We demonstrate an easy and practical method for the thickness analysis of epitaxial graphene on SiC(0001) that can be applied continuously during the preparation procedure. Fingerprints in the spot intensity spectra in low energy electron diffraction (LEED) allow for the exact determination of the number of layers for the first three graphene layers. The LEED data have been correlated with the electronic bandstructure around the (K) over bar -point of the graphene Brillouin zone as investigated by laboratory based angle resolved ultraviolet photoelectron spectroscopy using He II excitation. The morphology and homogeneity of the graphene layers can be analyzed by low energy electron microscopy. (C) 2008 American Institute of Physics.}},
  author       = {{Riedl, C. and Zakharov, Alexei and Starke, U.}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{3}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy}},
  url          = {{http://dx.doi.org/10.1063/1.2960341}},
  doi          = {{10.1063/1.2960341}},
  volume       = {{93}},
  year         = {{2008}},
}