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Photoinduced Electron Injection from Ru(dcbPY)2(NCS)2 to SnO2 and TiO2 Nanocrystalline Films.

Benko, Gabor LU ; Myllyperkio, Pasi LU ; Pan, Jie LU ; Yartsev, Arkady LU orcid and Sundström, Villy LU (2003) In Journal of the American Chemical Society 125(5). p.1118-1119
Abstract
Photoinduced electron injection from the sensitizer Ru(dcbpy)2(NCS)2 (RuN3) into SnO2 and TiO2 nanocrystalline films occurs by two distinct channels on the femto- and picosecond time scales. The faster electron injection into the conduction band of the different semiconductors originates from the initially excited singlet state of RuN3, and occurs in competition with intersystem crossing. The rate of singlet electron injection is faster to TiO2 (1/55 fs-1) than to SnO2 (1/145 fs-1), in agreement with higher density of conduction band acceptor states in the former semiconductor. As a result of competition between the ultrafast processes, for TiO2 singlet, whereas for SnO2 triplet electron injection is dominant. Electron injection from the... (More)
Photoinduced electron injection from the sensitizer Ru(dcbpy)2(NCS)2 (RuN3) into SnO2 and TiO2 nanocrystalline films occurs by two distinct channels on the femto- and picosecond time scales. The faster electron injection into the conduction band of the different semiconductors originates from the initially excited singlet state of RuN3, and occurs in competition with intersystem crossing. The rate of singlet electron injection is faster to TiO2 (1/55 fs-1) than to SnO2 (1/145 fs-1), in agreement with higher density of conduction band acceptor states in the former semiconductor. As a result of competition between the ultrafast processes, for TiO2 singlet, whereas for SnO2 triplet electron injection is dominant. Electron injection from the triplet state is nonexponential and can be fitted with time constants ranging from ~1 ps (2.5 ps for SnO2) to ~50 ps for both semiconductors. The major part of triplet injection is independent of the semiconductor and is most likely controlled by intramolecular dynamics in RuN3. The overall time scale and the yield of electron injection to the two semiconductors are very similar, suggesting that processes other than electron injection are responsible for the difference in efficiencies of solar cells made of these materials. (Less)
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of the American Chemical Society
volume
125
issue
5
pages
1118 - 1119
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:12553784
  • wos:000180713000005
  • scopus:0037419790
ISSN
1520-5126
DOI
10.1021/ja029025j
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Chemical Physics (S) (011001060), Department of Chemistry (011001220)
id
af51824b-5a69-4e35-8da8-87a95ee20738 (old id 128125)
date added to LUP
2016-04-01 17:04:53
date last changed
2022-01-29 00:12:01
@article{af51824b-5a69-4e35-8da8-87a95ee20738,
  abstract     = {{Photoinduced electron injection from the sensitizer Ru(dcbpy)2(NCS)2 (RuN3) into SnO2 and TiO2 nanocrystalline films occurs by two distinct channels on the femto- and picosecond time scales. The faster electron injection into the conduction band of the different semiconductors originates from the initially excited singlet state of RuN3, and occurs in competition with intersystem crossing. The rate of singlet electron injection is faster to TiO2 (1/55 fs-1) than to SnO2 (1/145 fs-1), in agreement with higher density of conduction band acceptor states in the former semiconductor. As a result of competition between the ultrafast processes, for TiO2 singlet, whereas for SnO2 triplet electron injection is dominant. Electron injection from the triplet state is nonexponential and can be fitted with time constants ranging from ~1 ps (2.5 ps for SnO2) to ~50 ps for both semiconductors. The major part of triplet injection is independent of the semiconductor and is most likely controlled by intramolecular dynamics in RuN3. The overall time scale and the yield of electron injection to the two semiconductors are very similar, suggesting that processes other than electron injection are responsible for the difference in efficiencies of solar cells made of these materials.}},
  author       = {{Benko, Gabor and Myllyperkio, Pasi and Pan, Jie and Yartsev, Arkady and Sundström, Villy}},
  issn         = {{1520-5126}},
  language     = {{eng}},
  number       = {{5}},
  pages        = {{1118--1119}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Journal of the American Chemical Society}},
  title        = {{Photoinduced Electron Injection from Ru(dcbPY)2(NCS)2 to SnO2 and TiO2 Nanocrystalline Films.}},
  url          = {{http://dx.doi.org/10.1021/ja029025j}},
  doi          = {{10.1021/ja029025j}},
  volume       = {{125}},
  year         = {{2003}},
}