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Composition-dependent crystallization of alternative gate dielectrics.

Van Dover, R B; Green, M L; Manchanda, L; Schneemeyer, L F and Siegrist, Theo LU (2003) In Applied Physics Letters 83(7). p.1459-1461
Abstract
We have investigated the crystallization of amorphous oxides that are considered likely candidates to replace amorphous SiO2 as the gate dielectric in advanced field-effect transistors. To avoid crystallization, the mole fraction of main-group oxide in the Zr–Si–O, Zr–Al–O, and Hf–Si–O systems must be greater than 83%, 65%, and 78%, respectively, leading to a maximum useful dielectric constant of only 6.9, 12.7, and 6.6, respectively. We conclude that the silicate systems are not likely to be useful as replacements for SiO2, while aluminates are more promising. ©2003 American Institute of Physics.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
83
issue
7
pages
1459 - 1461
publisher
American Institute of Physics
external identifiers
  • scopus:0042418690
ISSN
0003-6951
DOI
10.1063/1.1603341
language
English
LU publication?
yes
id
4ae53833-ea42-45b1-9046-f13914cede99 (old id 128451)
date added to LUP
2007-07-13 16:39:11
date last changed
2018-01-07 05:19:02
@article{4ae53833-ea42-45b1-9046-f13914cede99,
  abstract     = {We have investigated the crystallization of amorphous oxides that are considered likely candidates to replace amorphous SiO2 as the gate dielectric in advanced field-effect transistors. To avoid crystallization, the mole fraction of main-group oxide in the Zr–Si–O, Zr–Al–O, and Hf–Si–O systems must be greater than 83%, 65%, and 78%, respectively, leading to a maximum useful dielectric constant of only 6.9, 12.7, and 6.6, respectively. We conclude that the silicate systems are not likely to be useful as replacements for SiO2, while aluminates are more promising. ©2003 American Institute of Physics.},
  author       = {Van Dover, R B and Green, M L and Manchanda, L and Schneemeyer, L F and Siegrist, Theo},
  issn         = {0003-6951},
  language     = {eng},
  number       = {7},
  pages        = {1459--1461},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Composition-dependent crystallization of alternative gate dielectrics.},
  url          = {http://dx.doi.org/10.1063/1.1603341},
  volume       = {83},
  year         = {2003},
}