Advanced

Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors

Hoglund, L.; Holtz, P. O.; Pettersson, Håkan LU ; Asplund, C.; Wang, Q.; Almqvist, S.; Smuk, S.; Petrini, E. and Andersson, J. Y. (2008) In Applied Physics Letters 93(10).
Abstract
The performance of quantum dots-in-a-well infrared photodetectors (DWELL IPs) has been studied by means of interband and intersubband photocurrent measurements as well as dark current measurements. Using interband photocurrent measurements, substantial escape of electrons from lower lying states in the DWELL structure at large biases was revealed. Furthermore, a significant variation in the escape probability from energy states in the DWELL structure with applied bias was observed. These facts can explain the strong temperature and bias dependence of both photocurrent and dark currents in DWELL IPs. (c) 2008 American Institute of Physics.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
93
issue
10
publisher
American Institute of Physics
external identifiers
  • wos:000259797000101
  • scopus:51749103520
ISSN
0003-6951
DOI
10.1063/1.2977757
language
English
LU publication?
yes
id
7dbf8cf0-9988-4bfc-abb4-d73e36b22eab (old id 1285883)
date added to LUP
2009-02-06 08:41:45
date last changed
2017-01-01 04:58:43
@article{7dbf8cf0-9988-4bfc-abb4-d73e36b22eab,
  abstract     = {The performance of quantum dots-in-a-well infrared photodetectors (DWELL IPs) has been studied by means of interband and intersubband photocurrent measurements as well as dark current measurements. Using interband photocurrent measurements, substantial escape of electrons from lower lying states in the DWELL structure at large biases was revealed. Furthermore, a significant variation in the escape probability from energy states in the DWELL structure with applied bias was observed. These facts can explain the strong temperature and bias dependence of both photocurrent and dark currents in DWELL IPs. (c) 2008 American Institute of Physics.},
  articleno    = {103501},
  author       = {Hoglund, L. and Holtz, P. O. and Pettersson, Håkan and Asplund, C. and Wang, Q. and Almqvist, S. and Smuk, S. and Petrini, E. and Andersson, J. Y.},
  issn         = {0003-6951},
  language     = {eng},
  number       = {10},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors},
  url          = {http://dx.doi.org/10.1063/1.2977757},
  volume       = {93},
  year         = {2008},
}