Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

A 90nm CMOS UWB LNA

Axholt, Andreas LU ; Ahmad, Waqas LU and Sjöland, Henrik LU orcid (2008) Norchip Conference, 2008 p.25-28
Abstract
A single-ended two-stage 3.1-10.6GHz Low Noise Amplifier aimed for Ultra Wide Band (UWB) communication is presented. The LNA is fabricated in a 90nm CMOS process and measures just 0.31x0.41 mm2 including pads. The first stage topology is common-gate, to achieve a wideband input match. The second stage is a common source stage with resistive shunt feedback, to achieve high and flat gain over a wide frequency range. The chip was measured using RF-probes and has a gain of 17.25±1.25dB, a noise figure of 4.1-9.4 dB, and an input reflection S11 better than -12dB between 3.1GHz and 10.6GHz, while consuming 8.6mA from a 1V supply.
Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
[Host publication title missing]
pages
4 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
Norchip Conference, 2008
conference location
Talinn, Estonia
conference dates
2008-11-16 - 2008-11-17
external identifiers
  • scopus:62949153878
ISBN
978-1-4244-2492-4
DOI
10.1109/NORCHP.2008.4738276
language
English
LU publication?
yes
id
2d99f0d1-09a0-47ea-8132-47f722709f1d (old id 1289154)
date added to LUP
2016-04-04 10:26:00
date last changed
2024-01-12 20:16:15
@inproceedings{2d99f0d1-09a0-47ea-8132-47f722709f1d,
  abstract     = {{A single-ended two-stage 3.1-10.6GHz Low Noise Amplifier aimed for Ultra Wide Band (UWB) communication is presented. The LNA is fabricated in a 90nm CMOS process and measures just 0.31x0.41 mm2 including pads. The first stage topology is common-gate, to achieve a wideband input match. The second stage is a common source stage with resistive shunt feedback, to achieve high and flat gain over a wide frequency range. The chip was measured using RF-probes and has a gain of 17.25±1.25dB, a noise figure of 4.1-9.4 dB, and an input reflection S11 better than -12dB between 3.1GHz and 10.6GHz, while consuming 8.6mA from a 1V supply.}},
  author       = {{Axholt, Andreas and Ahmad, Waqas and Sjöland, Henrik}},
  booktitle    = {{[Host publication title missing]}},
  isbn         = {{978-1-4244-2492-4}},
  language     = {{eng}},
  pages        = {{25--28}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{A 90nm CMOS UWB LNA}},
  url          = {{http://dx.doi.org/10.1109/NORCHP.2008.4738276}},
  doi          = {{10.1109/NORCHP.2008.4738276}},
  year         = {{2008}},
}