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Optical absorption of polarized light in InAs/GaSb quantum wells

Zakharova, A.; Semenikhin, I. and Chao, Koung-An LU (2008) In Semiconductor Science and Technology 23(12).
Abstract
Using an eight-band k . p model Hamiltonian with the Burt-Foreman envelope function theory, we have investigated the optical absorption of both linearly and circularly polarized light, as well as related phenomena in InAs/GaSb broken-gap quantum wells grown along the [0 0 1] direction, with emphasis on the effects of electron-hole hybridization and the various symmetry-breaking mechanisms such as structural inversion asymmetry, bulk inversion asymmetry and interface Hamiltonian. The optical matrix elements exhibit unusual angular dependence in close connection with the spin-flip transitions which are originally forbidden. The spin split of the 2e subband results in two profound absorption peaks for the 1hh-2e transition for both linearly... (More)
Using an eight-band k . p model Hamiltonian with the Burt-Foreman envelope function theory, we have investigated the optical absorption of both linearly and circularly polarized light, as well as related phenomena in InAs/GaSb broken-gap quantum wells grown along the [0 0 1] direction, with emphasis on the effects of electron-hole hybridization and the various symmetry-breaking mechanisms such as structural inversion asymmetry, bulk inversion asymmetry and interface Hamiltonian. The optical matrix elements exhibit unusual angular dependence in close connection with the spin-flip transitions which are originally forbidden. The spin split of the 2e subband results in two profound absorption peaks for the 1hh-2e transition for both linearly polarized and circularly polarized light. A large lateral optical anisotropy appears in the absorption coefficient of linearly polarized light, which can reach almost 100% with a reducing thickness of the quantum well. For the absorption of circularly polarized light, we found a large enhancement of electron spin polarization in the upper 2e subband, which was generally considered as forbidden if the polarization is along the direction perpendicular to the plane-of-light incidence. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Semiconductor Science and Technology
volume
23
issue
12
publisher
IOP Publishing
external identifiers
  • wos:000261114300046
  • scopus:58149476913
ISSN
0268-1242
DOI
10.1088/0268-1242/23/12/125044
language
English
LU publication?
yes
id
eb4ce34e-bd3e-4485-b16a-cebdee69bf03 (old id 1305810)
date added to LUP
2009-03-20 11:21:23
date last changed
2017-01-01 05:42:02
@article{eb4ce34e-bd3e-4485-b16a-cebdee69bf03,
  abstract     = {Using an eight-band k . p model Hamiltonian with the Burt-Foreman envelope function theory, we have investigated the optical absorption of both linearly and circularly polarized light, as well as related phenomena in InAs/GaSb broken-gap quantum wells grown along the [0 0 1] direction, with emphasis on the effects of electron-hole hybridization and the various symmetry-breaking mechanisms such as structural inversion asymmetry, bulk inversion asymmetry and interface Hamiltonian. The optical matrix elements exhibit unusual angular dependence in close connection with the spin-flip transitions which are originally forbidden. The spin split of the 2e subband results in two profound absorption peaks for the 1hh-2e transition for both linearly polarized and circularly polarized light. A large lateral optical anisotropy appears in the absorption coefficient of linearly polarized light, which can reach almost 100% with a reducing thickness of the quantum well. For the absorption of circularly polarized light, we found a large enhancement of electron spin polarization in the upper 2e subband, which was generally considered as forbidden if the polarization is along the direction perpendicular to the plane-of-light incidence.},
  articleno    = {125044},
  author       = {Zakharova, A. and Semenikhin, I. and Chao, Koung-An},
  issn         = {0268-1242},
  language     = {eng},
  number       = {12},
  publisher    = {IOP Publishing},
  series       = {Semiconductor Science and Technology},
  title        = {Optical absorption of polarized light in InAs/GaSb quantum wells},
  url          = {http://dx.doi.org/10.1088/0268-1242/23/12/125044},
  volume       = {23},
  year         = {2008},
}