Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors

Hoglund, L. ; Holtz, P. O. ; Pettersson, Håkan LU ; Asplund, C. ; Wang, Q. ; Malm, H. ; Almqvist, S. ; Petrini, E. and Andersson, J. Y. (2008) In Applied Physics Letters 93(20).
Abstract
Bias-mediated tuning of the detection wavelength within the infrared wavelength region is demonstrated for quantum dots-in-a-well and dots-on-a-well infrared photodetectors. By positioning the InAs quantum dot layer asymmetrically in an 8 nm wide In0.15Ga0.85As/GaAs quantum well, a shift in the peak detection wavelength from 8.4 to 10.3 mu m was observed when reversing the polarity of the applied bias. For a dots-on-a-well structure, the peak detection wavelength was tuned from 5.4 to 8 mu m with small changes in the applied bias. These tuning properties could be essential for applications such as modulators and dual-color infrared detection.
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
semiconductor, quantum wells, semiconductor quantum dots, photodetectors, detectors, infrared, indium compounds, gallium arsenide, III-V semiconductors
in
Applied Physics Letters
volume
93
issue
20
article number
203512
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000261141400082
  • scopus:56849112773
ISSN
0003-6951
DOI
10.1063/1.3033169
language
English
LU publication?
yes
id
ec9699a1-d668-445e-a478-b18617c38824 (old id 1307997)
date added to LUP
2016-04-01 11:43:43
date last changed
2022-01-26 17:23:10
@article{ec9699a1-d668-445e-a478-b18617c38824,
  abstract     = {{Bias-mediated tuning of the detection wavelength within the infrared wavelength region is demonstrated for quantum dots-in-a-well and dots-on-a-well infrared photodetectors. By positioning the InAs quantum dot layer asymmetrically in an 8 nm wide In0.15Ga0.85As/GaAs quantum well, a shift in the peak detection wavelength from 8.4 to 10.3 mu m was observed when reversing the polarity of the applied bias. For a dots-on-a-well structure, the peak detection wavelength was tuned from 5.4 to 8 mu m with small changes in the applied bias. These tuning properties could be essential for applications such as modulators and dual-color infrared detection.}},
  author       = {{Hoglund, L. and Holtz, P. O. and Pettersson, Håkan and Asplund, C. and Wang, Q. and Malm, H. and Almqvist, S. and Petrini, E. and Andersson, J. Y.}},
  issn         = {{0003-6951}},
  keywords     = {{semiconductor; quantum wells; semiconductor quantum dots; photodetectors; detectors; infrared; indium compounds; gallium arsenide; III-V semiconductors}},
  language     = {{eng}},
  number       = {{20}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors}},
  url          = {{http://dx.doi.org/10.1063/1.3033169}},
  doi          = {{10.1063/1.3033169}},
  volume       = {{93}},
  year         = {{2008}},
}