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Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors

Hoglund, L.; Holtz, P. O.; Pettersson, Håkan LU ; Asplund, C.; Wang, Q.; Malm, H.; Almqvist, S.; Petrini, E. and Andersson, J. Y. (2008) In Applied Physics Letters 93(20).
Abstract
Bias-mediated tuning of the detection wavelength within the infrared wavelength region is demonstrated for quantum dots-in-a-well and dots-on-a-well infrared photodetectors. By positioning the InAs quantum dot layer asymmetrically in an 8 nm wide In0.15Ga0.85As/GaAs quantum well, a shift in the peak detection wavelength from 8.4 to 10.3 mu m was observed when reversing the polarity of the applied bias. For a dots-on-a-well structure, the peak detection wavelength was tuned from 5.4 to 8 mu m with small changes in the applied bias. These tuning properties could be essential for applications such as modulators and dual-color infrared detection.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
semiconductor, quantum wells, semiconductor quantum dots, photodetectors, detectors, infrared, indium compounds, gallium arsenide, III-V semiconductors
in
Applied Physics Letters
volume
93
issue
20
publisher
American Institute of Physics
external identifiers
  • wos:000261141400082
  • scopus:56849112773
ISSN
0003-6951
DOI
10.1063/1.3033169
language
English
LU publication?
yes
id
ec9699a1-d668-445e-a478-b18617c38824 (old id 1307997)
date added to LUP
2009-03-19 13:34:15
date last changed
2017-01-01 04:29:04
@article{ec9699a1-d668-445e-a478-b18617c38824,
  abstract     = {Bias-mediated tuning of the detection wavelength within the infrared wavelength region is demonstrated for quantum dots-in-a-well and dots-on-a-well infrared photodetectors. By positioning the InAs quantum dot layer asymmetrically in an 8 nm wide In0.15Ga0.85As/GaAs quantum well, a shift in the peak detection wavelength from 8.4 to 10.3 mu m was observed when reversing the polarity of the applied bias. For a dots-on-a-well structure, the peak detection wavelength was tuned from 5.4 to 8 mu m with small changes in the applied bias. These tuning properties could be essential for applications such as modulators and dual-color infrared detection.},
  articleno    = {203512},
  author       = {Hoglund, L. and Holtz, P. O. and Pettersson, Håkan and Asplund, C. and Wang, Q. and Malm, H. and Almqvist, S. and Petrini, E. and Andersson, J. Y.},
  issn         = {0003-6951},
  keyword      = {semiconductor,quantum wells,semiconductor quantum dots,photodetectors,detectors,infrared,indium compounds,gallium arsenide,III-V semiconductors},
  language     = {eng},
  number       = {20},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors},
  url          = {http://dx.doi.org/10.1063/1.3033169},
  volume       = {93},
  year         = {2008},
}