Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors
(2009) In Journal of Crystal Growth 311(4). p.1096-1101- Abstract
- We report on properties of low-temperature (LT) ZnO films grown by the atomic layer deposition method with diethylzinc (DEZn) precursor. It is shown that the ZnO thin film crystallographic orientation, quality of the surface, and optical properties depend on the main growth parameters like temperature, pulsing, and purging time and thus can be varied in controllable manner. All the presented results were obtained for ZnO layers grown at temperature between 90 and 200 degrees C. (C) 2008 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1401029
- author
- Kowalik, Iwona LU ; Guziewicz, E. ; Kopalko, K. ; Yatsunenko, S. ; Wojcik-Glodowska, A. ; Godlewski, M. ; Dluzewski, P. ; Lusakowska, E. and Paszkowicz, W.
- organization
- publishing date
- 2009
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Heterojunction semiconductor devices, II-VI materials, Semiconducting, Zinc compounds, Characterization, Atomic layer epitaxy, Solar cells
- in
- Journal of Crystal Growth
- volume
- 311
- issue
- 4
- pages
- 1096 - 1101
- publisher
- Elsevier
- external identifiers
-
- wos:000264711800015
- scopus:60649106729
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2008.11.086
- language
- English
- LU publication?
- yes
- id
- dc13172f-ca93-4a4c-8a46-994e99143ef5 (old id 1401029)
- date added to LUP
- 2016-04-01 12:52:53
- date last changed
- 2022-01-27 08:07:03
@article{dc13172f-ca93-4a4c-8a46-994e99143ef5, abstract = {{We report on properties of low-temperature (LT) ZnO films grown by the atomic layer deposition method with diethylzinc (DEZn) precursor. It is shown that the ZnO thin film crystallographic orientation, quality of the surface, and optical properties depend on the main growth parameters like temperature, pulsing, and purging time and thus can be varied in controllable manner. All the presented results were obtained for ZnO layers grown at temperature between 90 and 200 degrees C. (C) 2008 Elsevier B.V. All rights reserved.}}, author = {{Kowalik, Iwona and Guziewicz, E. and Kopalko, K. and Yatsunenko, S. and Wojcik-Glodowska, A. and Godlewski, M. and Dluzewski, P. and Lusakowska, E. and Paszkowicz, W.}}, issn = {{0022-0248}}, keywords = {{Heterojunction semiconductor devices; II-VI materials; Semiconducting; Zinc compounds; Characterization; Atomic layer epitaxy; Solar cells}}, language = {{eng}}, number = {{4}}, pages = {{1096--1101}}, publisher = {{Elsevier}}, series = {{Journal of Crystal Growth}}, title = {{Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors}}, url = {{http://dx.doi.org/10.1016/j.jcrysgro.2008.11.086}}, doi = {{10.1016/j.jcrysgro.2008.11.086}}, volume = {{311}}, year = {{2009}}, }