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Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors

Kowalik, Iwona LU ; Guziewicz, E.; Kopalko, K.; Yatsunenko, S.; Wojcik-Glodowska, A.; Godlewski, M.; Dluzewski, P.; Lusakowska, E. and Paszkowicz, W. (2009) In Journal of Crystal Growth 311(4). p.1096-1101
Abstract
We report on properties of low-temperature (LT) ZnO films grown by the atomic layer deposition method with diethylzinc (DEZn) precursor. It is shown that the ZnO thin film crystallographic orientation, quality of the surface, and optical properties depend on the main growth parameters like temperature, pulsing, and purging time and thus can be varied in controllable manner. All the presented results were obtained for ZnO layers grown at temperature between 90 and 200 degrees C. (C) 2008 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Heterojunction semiconductor devices, II-VI materials, Semiconducting, Zinc compounds, Characterization, Atomic layer epitaxy, Solar cells
in
Journal of Crystal Growth
volume
311
issue
4
pages
1096 - 1101
publisher
Elsevier
external identifiers
  • wos:000264711800015
  • scopus:60649106729
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2008.11.086
language
English
LU publication?
yes
id
dc13172f-ca93-4a4c-8a46-994e99143ef5 (old id 1401029)
date added to LUP
2009-06-12 09:30:44
date last changed
2017-10-08 03:45:12
@article{dc13172f-ca93-4a4c-8a46-994e99143ef5,
  abstract     = {We report on properties of low-temperature (LT) ZnO films grown by the atomic layer deposition method with diethylzinc (DEZn) precursor. It is shown that the ZnO thin film crystallographic orientation, quality of the surface, and optical properties depend on the main growth parameters like temperature, pulsing, and purging time and thus can be varied in controllable manner. All the presented results were obtained for ZnO layers grown at temperature between 90 and 200 degrees C. (C) 2008 Elsevier B.V. All rights reserved.},
  author       = {Kowalik, Iwona and Guziewicz, E. and Kopalko, K. and Yatsunenko, S. and Wojcik-Glodowska, A. and Godlewski, M. and Dluzewski, P. and Lusakowska, E. and Paszkowicz, W.},
  issn         = {0022-0248},
  keyword      = {Heterojunction semiconductor devices,II-VI materials,Semiconducting,Zinc compounds,Characterization,Atomic layer epitaxy,Solar cells},
  language     = {eng},
  number       = {4},
  pages        = {1096--1101},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {Structural and optical properties of low-temperature ZnO films grown by atomic layer deposition with diethylzinc and water precursors},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2008.11.086},
  volume       = {311},
  year         = {2009},
}