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Novel nanoelectronic device applications based on the nonlinearity of three-terminal ballistic junctions

Sun, Jie LU ; Wallin, Daniel LU ; Brusheim, Patrik LU ; Maximov, Ivan LU ; Wang, Z. G. and Xu, Hongqi LU (2007) 28th International Conference on the Physics of Semiconductors (ICPS-28) In Physics of Semiconductors, Pts A and B 893. p.1471-1472
Abstract
Nanometer-scale electron devices containing three-terminal ballistic junctions are fabricated by electron-beam lithography on InP/InGaAs two-dimensional electron gas materials. Based on the intrinsic nonlinearity of the devices, frequency mixer, phase detector and RS flip-flop memory functioning at room temperature are successfully achieved. The devices have simple structure layout and small size, and are expected to function at high speed.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
frequency mixer, three-terminal ballistic junctions, flip-flop memory, phase detector, RS
in
Physics of Semiconductors, Pts A and B
volume
893
pages
1471 - 1472
publisher
American Institute of Physics
conference name
28th International Conference on the Physics of Semiconductors (ICPS-28)
external identifiers
  • wos:000246281800723
  • scopus:77958515016
ISSN
0094-243X
1551-7616
DOI
10.1063/1.2730463
language
English
LU publication?
yes
id
b0399e00-7ba4-4b20-966c-cf9c1d152b77 (old id 1409893)
date added to LUP
2009-05-29 12:51:34
date last changed
2017-01-01 05:05:17
@inproceedings{b0399e00-7ba4-4b20-966c-cf9c1d152b77,
  abstract     = {Nanometer-scale electron devices containing three-terminal ballistic junctions are fabricated by electron-beam lithography on InP/InGaAs two-dimensional electron gas materials. Based on the intrinsic nonlinearity of the devices, frequency mixer, phase detector and RS flip-flop memory functioning at room temperature are successfully achieved. The devices have simple structure layout and small size, and are expected to function at high speed.},
  author       = {Sun, Jie and Wallin, Daniel and Brusheim, Patrik and Maximov, Ivan and Wang, Z. G. and Xu, Hongqi},
  booktitle    = {Physics of Semiconductors, Pts A and B},
  issn         = {0094-243X},
  keyword      = {frequency mixer,three-terminal ballistic junctions,flip-flop memory,phase detector,RS},
  language     = {eng},
  pages        = {1471--1472},
  publisher    = {American Institute of Physics},
  title        = {Novel nanoelectronic device applications based on the nonlinearity of three-terminal ballistic junctions},
  url          = {http://dx.doi.org/10.1063/1.2730463},
  volume       = {893},
  year         = {2007},
}