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Band structure of segmented semiconductor nanowires

Pistol, Mats-Erik LU and Pryor, C. E. (2009) In Physical Review B (Condensed Matter and Materials Physics) 80(3).
Abstract
We have calculated the band structures for strained segmented nanowires involving all combinations of AlN, GaN, InN, AlP, GaP, AlAs, GaAs, InP, InAs, AlSb, GaSb, and InSb, as a function of segment length. This was done for two different growth directions of the wires, [100] and [111]. Both the Gamma and the X conduction-band minima were included in the calculations as well as the valence bands. Short segments behave like strained quantum wells and our results thus include strained quantum wells as a subset. We find all material combinations that give metallic segments due to a negative band gap and we find all the band alignments that may occur. We identify those structures which show spontaneous charge separation as well as those which... (More)
We have calculated the band structures for strained segmented nanowires involving all combinations of AlN, GaN, InN, AlP, GaP, AlAs, GaAs, InP, InAs, AlSb, GaSb, and InSb, as a function of segment length. This was done for two different growth directions of the wires, [100] and [111]. Both the Gamma and the X conduction-band minima were included in the calculations as well as the valence bands. Short segments behave like strained quantum wells and our results thus include strained quantum wells as a subset. We find all material combinations that give metallic segments due to a negative band gap and we find all the band alignments that may occur. We identify those structures which show spontaneous charge separation as well as those which are suitable for the optical generation of polarized exciton gases, with their rich phase diagram, theoretically predicted to include superfluids and supersolids. Some device related ideas are presented. Due to the amount of data (several hundreds of diagrams) most of our results are presented as a webpage. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
80
issue
3
publisher
American Physical Society
external identifiers
  • wos:000268617800088
  • scopus:69549103282
ISSN
1098-0121
DOI
10.1103/PhysRevB.80.035316
language
English
LU publication?
yes
id
146ef3ac-583c-4b90-9a35-88cc7a98e1cd (old id 1459801)
date added to LUP
2009-08-25 16:02:52
date last changed
2017-09-03 04:11:52
@article{146ef3ac-583c-4b90-9a35-88cc7a98e1cd,
  abstract     = {We have calculated the band structures for strained segmented nanowires involving all combinations of AlN, GaN, InN, AlP, GaP, AlAs, GaAs, InP, InAs, AlSb, GaSb, and InSb, as a function of segment length. This was done for two different growth directions of the wires, [100] and [111]. Both the Gamma and the X conduction-band minima were included in the calculations as well as the valence bands. Short segments behave like strained quantum wells and our results thus include strained quantum wells as a subset. We find all material combinations that give metallic segments due to a negative band gap and we find all the band alignments that may occur. We identify those structures which show spontaneous charge separation as well as those which are suitable for the optical generation of polarized exciton gases, with their rich phase diagram, theoretically predicted to include superfluids and supersolids. Some device related ideas are presented. Due to the amount of data (several hundreds of diagrams) most of our results are presented as a webpage.},
  articleno    = {035316},
  author       = {Pistol, Mats-Erik and Pryor, C. E.},
  issn         = {1098-0121},
  language     = {eng},
  number       = {3},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Band structure of segmented semiconductor nanowires},
  url          = {http://dx.doi.org/10.1103/PhysRevB.80.035316},
  volume       = {80},
  year         = {2009},
}