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Improved breakdown voltages for type I InP/InGaAs DHBTs

Lind, Erik LU ; Griffith, Zach and Rodwell, Mark J. W. (2008) 20th International Conference on Indium Phosphide and Related Materials In 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008 p.504-507
Abstract
We have investigated the base-collector breakdown voltage of type I InGaAs/InP DHBTs, which is shown to be dominated by band-to-band tunneling in the base-collector grade. By optimizing the grade we obtain a 20% increase in the breakdown voltage compared with traditional grades.
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
InP heterojunction bipolar transistor
in
20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008
pages
504 - 507
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
20th International Conference on Indium Phosphide and Related Materials
external identifiers
  • wos:000267695700142
  • scopus:70149100468
ISSN
1092-8669
DOI
10.1109/ICIPRM.2008.4703033
language
English
LU publication?
yes
id
e92fc757-61a4-4bee-a57c-de189afc671d (old id 1463541)
date added to LUP
2009-08-18 09:22:54
date last changed
2017-03-26 03:55:37
@inproceedings{e92fc757-61a4-4bee-a57c-de189afc671d,
  abstract     = {We have investigated the base-collector breakdown voltage of type I InGaAs/InP DHBTs, which is shown to be dominated by band-to-band tunneling in the base-collector grade. By optimizing the grade we obtain a 20% increase in the breakdown voltage compared with traditional grades.},
  author       = {Lind, Erik and Griffith, Zach and Rodwell, Mark J. W.},
  booktitle    = {20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008},
  issn         = {1092-8669},
  keyword      = {InP heterojunction bipolar transistor},
  language     = {eng},
  pages        = {504--507},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  title        = {Improved breakdown voltages for type I InP/InGaAs DHBTs},
  url          = {http://dx.doi.org/10.1109/ICIPRM.2008.4703033},
  year         = {2008},
}