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Identification of the gallium vacancy-oxygen pair defect in GaN

Son, N. T.; Hemmingsson, C. G.; Paskova, T.; Evans, K. R.; Usui, A.; Morishita, N.; Ohshima, T.; Isoya, J.; Monemar, Bo LU and Janzen, E. (2009) In Physical Review B (Condensed Matter and Materials Physics) 80(15).
Abstract
Cation vacancies like V-Ga, V-Al and their complexes with oxygen are predicted to be abundant in III-nitrides and to play an important role in nonradiative recombination. Appearing in triple or double negatively charged states, they are not paramagnetic and have not so far been detected by magnetic resonance even under illumination. In this Brief Report, we demonstrate an efficient way to make cation vacancy defects in GaN detectable by electron paramagnetic resonance and present our identification of the VGaON pair in GaN which is the model material for the III-nitrides and their alloys.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
80
issue
15
publisher
American Physical Society
external identifiers
  • wos:000271352000007
  • scopus:71449106333
ISSN
1098-0121
DOI
10.1103/PhysRevB.80.153202
language
English
LU publication?
yes
id
f8d42c48-3b18-4d5c-a776-9f109c3f2ddf (old id 1504805)
date added to LUP
2009-11-25 09:33:47
date last changed
2017-06-25 04:14:42
@article{f8d42c48-3b18-4d5c-a776-9f109c3f2ddf,
  abstract     = {Cation vacancies like V-Ga, V-Al and their complexes with oxygen are predicted to be abundant in III-nitrides and to play an important role in nonradiative recombination. Appearing in triple or double negatively charged states, they are not paramagnetic and have not so far been detected by magnetic resonance even under illumination. In this Brief Report, we demonstrate an efficient way to make cation vacancy defects in GaN detectable by electron paramagnetic resonance and present our identification of the VGaON pair in GaN which is the model material for the III-nitrides and their alloys.},
  articleno    = {153202},
  author       = {Son, N. T. and Hemmingsson, C. G. and Paskova, T. and Evans, K. R. and Usui, A. and Morishita, N. and Ohshima, T. and Isoya, J. and Monemar, Bo and Janzen, E.},
  issn         = {1098-0121},
  language     = {eng},
  number       = {15},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Identification of the gallium vacancy-oxygen pair defect in GaN},
  url          = {http://dx.doi.org/10.1103/PhysRevB.80.153202},
  volume       = {80},
  year         = {2009},
}