Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
(2009) In Physical Review Letters 103(24).- Abstract
- Quasi-free-standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the (6 root 3 x 6 root 3) R 30 degrees reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are covalently bound to this buffer layer, are now saturated by hydrogen bonds. The buffer layer is turned into a quasi-free-standing graphene monolayer with its typical linear pi bands. Similarly, epitaxial monolayer graphene turns into a decoupled bilayer. The intercalation is stable in air and can be reversed by annealing to around 900 degrees C.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1532210
- author
- Riedl, C. ; Coletti, C. ; Iwasaki, T. ; Zakharov, Alexei LU and Starke, U.
- organization
- publishing date
- 2009
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review Letters
- volume
- 103
- issue
- 24
- publisher
- American Physical Society
- external identifiers
-
- wos:000272627800034
- scopus:72049105359
- ISSN
- 1079-7114
- DOI
- 10.1103/PhysRevLett.103.246804
- language
- English
- LU publication?
- yes
- id
- e7b0265e-8006-491d-8214-4f82b8673562 (old id 1532210)
- date added to LUP
- 2016-04-01 12:03:30
- date last changed
- 2022-04-28 23:45:11
@article{e7b0265e-8006-491d-8214-4f82b8673562, abstract = {{Quasi-free-standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the (6 root 3 x 6 root 3) R 30 degrees reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are covalently bound to this buffer layer, are now saturated by hydrogen bonds. The buffer layer is turned into a quasi-free-standing graphene monolayer with its typical linear pi bands. Similarly, epitaxial monolayer graphene turns into a decoupled bilayer. The intercalation is stable in air and can be reversed by annealing to around 900 degrees C.}}, author = {{Riedl, C. and Coletti, C. and Iwasaki, T. and Zakharov, Alexei and Starke, U.}}, issn = {{1079-7114}}, language = {{eng}}, number = {{24}}, publisher = {{American Physical Society}}, series = {{Physical Review Letters}}, title = {{Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation}}, url = {{http://dx.doi.org/10.1103/PhysRevLett.103.246804}}, doi = {{10.1103/PhysRevLett.103.246804}}, volume = {{103}}, year = {{2009}}, }