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Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation

Riedl, C.; Coletti, C.; Iwasaki, T.; Zakharov, Alexei LU and Starke, U. (2009) In Physical Review Letters 103(24).
Abstract
Quasi-free-standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the (6 root 3 x 6 root 3) R 30 degrees reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are covalently bound to this buffer layer, are now saturated by hydrogen bonds. The buffer layer is turned into a quasi-free-standing graphene monolayer with its typical linear pi bands. Similarly, epitaxial monolayer graphene turns into a decoupled bilayer. The intercalation is stable in air and can be reversed by annealing to around 900 degrees C.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review Letters
volume
103
issue
24
publisher
American Physical Society
external identifiers
  • wos:000272627800034
  • scopus:72049105359
ISSN
1079-7114
DOI
10.1103/PhysRevLett.103.246804
language
English
LU publication?
yes
id
e7b0265e-8006-491d-8214-4f82b8673562 (old id 1532210)
date added to LUP
2010-01-29 14:31:59
date last changed
2017-12-10 03:46:54
@article{e7b0265e-8006-491d-8214-4f82b8673562,
  abstract     = {Quasi-free-standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the (6 root 3 x 6 root 3) R 30 degrees reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are covalently bound to this buffer layer, are now saturated by hydrogen bonds. The buffer layer is turned into a quasi-free-standing graphene monolayer with its typical linear pi bands. Similarly, epitaxial monolayer graphene turns into a decoupled bilayer. The intercalation is stable in air and can be reversed by annealing to around 900 degrees C.},
  author       = {Riedl, C. and Coletti, C. and Iwasaki, T. and Zakharov, Alexei and Starke, U.},
  issn         = {1079-7114},
  language     = {eng},
  number       = {24},
  publisher    = {American Physical Society},
  series       = {Physical Review Letters},
  title        = {Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation},
  url          = {http://dx.doi.org/10.1103/PhysRevLett.103.246804},
  volume       = {103},
  year         = {2009},
}