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Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-kappa dielectric material

Sun, Jie LU ; Larsson, Marcus LU ; Maximov, Ivan LU orcid and Xu, Hongqi LU (2009) IEEE Nanotechnology Materials and Devices Conference p.183-185
Abstract
Gate-defined quantum devices in an InGaAs/InP heterostructure are achieved by introducing a HfO2 layer as the gate dielectric. The high-kappa layer is grown by atomic layer deposition and the fabrication process is described in detail. Electrical measurements at low temperature reveal the Coulomb blockade effect. Magnetotransport characterization is also carried out for the devices made from this promising spintronic material and the current peaks are found to shift in spin pairs with the applied B-field perpendicular to the wafer.
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author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
High-kappa dielectric, InGaAs/InP, Quantum devices
host publication
2009 IEEE Nanotechnology Materials and Devices Conference
pages
183 - 185
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
IEEE Nanotechnology Materials and Devices Conference
conference location
Traverse City, MI, United States
conference dates
2009-06-02 - 2009-06-05
external identifiers
  • wos:000273600300044
language
English
LU publication?
yes
id
3ff2a7dc-a653-4000-9eb4-9a1b3d89ee58 (old id 1546701)
date added to LUP
2016-04-04 11:42:49
date last changed
2018-11-21 21:06:42
@inproceedings{3ff2a7dc-a653-4000-9eb4-9a1b3d89ee58,
  abstract     = {{Gate-defined quantum devices in an InGaAs/InP heterostructure are achieved by introducing a HfO2 layer as the gate dielectric. The high-kappa layer is grown by atomic layer deposition and the fabrication process is described in detail. Electrical measurements at low temperature reveal the Coulomb blockade effect. Magnetotransport characterization is also carried out for the devices made from this promising spintronic material and the current peaks are found to shift in spin pairs with the applied B-field perpendicular to the wafer.}},
  author       = {{Sun, Jie and Larsson, Marcus and Maximov, Ivan and Xu, Hongqi}},
  booktitle    = {{2009 IEEE Nanotechnology Materials and Devices Conference}},
  keywords     = {{High-kappa dielectric; InGaAs/InP; Quantum devices}},
  language     = {{eng}},
  pages        = {{183--185}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-kappa dielectric material}},
  year         = {{2009}},
}