Field-orientation dependence of the Zeeman spin splitting in (In,Ga)As quantum point contacts
(2010) In Physical Review B (Condensed Matter and Materials Physics) 81(4).- Abstract
- We study the Zeeman spin splitting in a quantum point contact (QPC) etched into an InGaAs/InP heterostructure for three orthogonal magnetic field orientations with respect to the QPC. For the two in-plane orientations we observe an isotropic Zeeman spin splitting, which becomes stronger as the system is made more one dimensional. The Lande g factor is enhanced by up to a factor of two compared to two-dimensional electron systems in InGaAs/InP. A much larger Zeeman splitting is observed when the field is oriented perpendicular to the heterostructure, resulting in a g factor of 15.7 in the one-dimensional limit.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1546899
- author
- Martin, T. P. ; Szorkovszky, A. ; Micolich, A. P. ; Hamilton, A. R. ; Marlow, C. A. ; Taylor, R. P. ; Linke, Heiner LU and Xu, Hongqi LU
- organization
- publishing date
- 2010
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 81
- issue
- 4
- article number
- 041303
- publisher
- American Physical Society
- external identifiers
-
- wos:000274002500009
- scopus:77954829460
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.81.041303
- language
- English
- LU publication?
- yes
- id
- d2f338ff-ad30-484d-bf89-3033cd11fb71 (old id 1546899)
- date added to LUP
- 2016-04-01 13:50:28
- date last changed
- 2023-11-12 22:44:41
@article{d2f338ff-ad30-484d-bf89-3033cd11fb71, abstract = {{We study the Zeeman spin splitting in a quantum point contact (QPC) etched into an InGaAs/InP heterostructure for three orthogonal magnetic field orientations with respect to the QPC. For the two in-plane orientations we observe an isotropic Zeeman spin splitting, which becomes stronger as the system is made more one dimensional. The Lande g factor is enhanced by up to a factor of two compared to two-dimensional electron systems in InGaAs/InP. A much larger Zeeman splitting is observed when the field is oriented perpendicular to the heterostructure, resulting in a g factor of 15.7 in the one-dimensional limit.}}, author = {{Martin, T. P. and Szorkovszky, A. and Micolich, A. P. and Hamilton, A. R. and Marlow, C. A. and Taylor, R. P. and Linke, Heiner and Xu, Hongqi}}, issn = {{1098-0121}}, language = {{eng}}, number = {{4}}, publisher = {{American Physical Society}}, series = {{Physical Review B (Condensed Matter and Materials Physics)}}, title = {{Field-orientation dependence of the Zeeman spin splitting in (In,Ga)As quantum point contacts}}, url = {{http://dx.doi.org/10.1103/PhysRevB.81.041303}}, doi = {{10.1103/PhysRevB.81.041303}}, volume = {{81}}, year = {{2010}}, }