Charge pumping in InAs nanowires by surface acoustic waves
(2010) In Semiconductor Science and Technology 25(2).- Abstract
- We investigate the interaction between surface acoustic waves on a piezoelectric LiNbO3 substrate and charge carriers in InAs nanowire transistors. Interdigital transducers are used to excite electromechanical waves on the chip surface and their influence on the transport in the nanowire devices is studied at room temperature. Charge pumping is studied in different biasing conditions and in pulsed operation in order to assess interference effects due to reflected waves on the sample chip. Present results constitute a key building block for the realization of acoustoelectric nanodevices based on the InAs/InP nanowire technology.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1547147
- author
- Roddaro, Stefano ; Strambini, Elia ; Romeo, Lorenzo ; Piazza, Vincenzo ; Nilsson, Kristian ; Samuelson, Lars LU and Beltram, Fabio
- organization
- publishing date
- 2010
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Semiconductor Science and Technology
- volume
- 25
- issue
- 2
- article number
- 024013
- publisher
- IOP Publishing
- external identifiers
-
- wos:000273852300014
- scopus:76749156707
- ISSN
- 0268-1242
- DOI
- 10.1088/0268-1242/25/2/024013
- language
- English
- LU publication?
- yes
- id
- 078a1b7f-53b1-4323-9ef2-5ef1476482e3 (old id 1547147)
- date added to LUP
- 2016-04-01 14:20:33
- date last changed
- 2023-09-17 13:06:27
@article{078a1b7f-53b1-4323-9ef2-5ef1476482e3,
abstract = {{We investigate the interaction between surface acoustic waves on a piezoelectric LiNbO3 substrate and charge carriers in InAs nanowire transistors. Interdigital transducers are used to excite electromechanical waves on the chip surface and their influence on the transport in the nanowire devices is studied at room temperature. Charge pumping is studied in different biasing conditions and in pulsed operation in order to assess interference effects due to reflected waves on the sample chip. Present results constitute a key building block for the realization of acoustoelectric nanodevices based on the InAs/InP nanowire technology.}},
author = {{Roddaro, Stefano and Strambini, Elia and Romeo, Lorenzo and Piazza, Vincenzo and Nilsson, Kristian and Samuelson, Lars and Beltram, Fabio}},
issn = {{0268-1242}},
language = {{eng}},
number = {{2}},
publisher = {{IOP Publishing}},
series = {{Semiconductor Science and Technology}},
title = {{Charge pumping in InAs nanowires by surface acoustic waves}},
url = {{http://dx.doi.org/10.1088/0268-1242/25/2/024013}},
doi = {{10.1088/0268-1242/25/2/024013}},
volume = {{25}},
year = {{2010}},
}