As3d core level studies of (GaMn)As annealed under As capping
(2010) In Surface Science 604(2). p.125-128- Abstract
- The surface of a Ga0.95Mn0.05As layer subjected to low temperature annealing under As capping has been studied by core level photoemission with focus on As3d spectrum. By detailed comparison with the surface of pure GaAs subjected to the same surface treatment, the As spectral component of the reacted surface layer has been identified. The relative intensity of this component is consistent with the notion of an MnAs monolayer terminating the annealed (GaMn)As surface. (C) 2009 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1568452
- author
- Ulfat, Intikhab LU ; Adell, Johan LU ; Sadowski, J. ; Ilver, L. and Kanski, J.
- organization
- publishing date
- 2010
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Post-growth annealing, (GaMn)As, Core level photoemission, As3d spectrum
- in
- Surface Science
- volume
- 604
- issue
- 2
- pages
- 125 - 128
- publisher
- Elsevier
- external identifiers
-
- wos:000274591000010
- scopus:72649092788
- ISSN
- 0039-6028
- DOI
- 10.1016/j.susc.2009.10.029
- language
- English
- LU publication?
- yes
- id
- 49648536-fe57-4328-9a0a-99dcad3a5657 (old id 1568452)
- date added to LUP
- 2016-04-01 14:40:41
- date last changed
- 2022-01-28 01:58:03
@article{49648536-fe57-4328-9a0a-99dcad3a5657, abstract = {{The surface of a Ga0.95Mn0.05As layer subjected to low temperature annealing under As capping has been studied by core level photoemission with focus on As3d spectrum. By detailed comparison with the surface of pure GaAs subjected to the same surface treatment, the As spectral component of the reacted surface layer has been identified. The relative intensity of this component is consistent with the notion of an MnAs monolayer terminating the annealed (GaMn)As surface. (C) 2009 Elsevier B.V. All rights reserved.}}, author = {{Ulfat, Intikhab and Adell, Johan and Sadowski, J. and Ilver, L. and Kanski, J.}}, issn = {{0039-6028}}, keywords = {{Post-growth annealing; (GaMn)As; Core level photoemission; As3d spectrum}}, language = {{eng}}, number = {{2}}, pages = {{125--128}}, publisher = {{Elsevier}}, series = {{Surface Science}}, title = {{As3d core level studies of (GaMn)As annealed under As capping}}, url = {{http://dx.doi.org/10.1016/j.susc.2009.10.029}}, doi = {{10.1016/j.susc.2009.10.029}}, volume = {{604}}, year = {{2010}}, }