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Novel room-temperature functional analogue and digital nanoelectronic circuits based on three-terminal ballistic junctions and planar quantum-wire transistors

Sun, Jie LU ; Wallin, Daniel LU ; Brusheim, Patrik LU ; Maximov, Ivan LU orcid and Xu, Hongqi LU (2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology 100. p.052073-052073
Abstract
Three-Terminal ballistic junctions (TBJs) and planar quantum-wire transistors (QWTs) are emerging nanoelectronic devices with various novel electrical properties. In this work, we realize novel nanoelectronic analogue and digital circuits with TBJs and planar QWTs made on In0.75Ga0.25As/InP two-dimensional electron gas (2DEG) material. First we show that a single TBJ can work as a frequency mixer or a phase detector. Second, we fabricate an integrated nanostructure containing two planar QWTs, which can be used as an RS flip-flop element. Third, we make a nanoelectronic circuit by the integration of two TBJs and two planar QWTs. This circuit shows the RS flip-flop functionalities with much larger noise margins in both high and low level... (More)
Three-Terminal ballistic junctions (TBJs) and planar quantum-wire transistors (QWTs) are emerging nanoelectronic devices with various novel electrical properties. In this work, we realize novel nanoelectronic analogue and digital circuits with TBJs and planar QWTs made on In0.75Ga0.25As/InP two-dimensional electron gas (2DEG) material. First we show that a single TBJ can work as a frequency mixer or a phase detector. Second, we fabricate an integrated nanostructure containing two planar QWTs, which can be used as an RS flip-flop element. Third, we make a nanoelectronic circuit by the integration of two TBJs and two planar QWTs. This circuit shows the RS flip-flop functionalities with much larger noise margins in both high and low level inputs. All measurements in this work are done at room temperature. (Less)
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author
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organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
Journal of Physics: Conference Series
volume
100
pages
052073 - 052073
publisher
IOP Publishing
conference name
17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology
conference location
Stockholm, Sweden
conference dates
2007-07-02 - 2007-07-06
external identifiers
  • wos:000275655200169
  • scopus:77954342815
ISSN
1742-6588
1742-6596
DOI
10.1088/1742-6596/100/5/052073
language
English
LU publication?
yes
id
9f7bcb12-cbec-46d9-8bc0-a5951ea980cd (old id 1586340)
date added to LUP
2016-04-01 12:24:08
date last changed
2025-01-02 16:39:19
@inproceedings{9f7bcb12-cbec-46d9-8bc0-a5951ea980cd,
  abstract     = {{Three-Terminal ballistic junctions (TBJs) and planar quantum-wire transistors (QWTs) are emerging nanoelectronic devices with various novel electrical properties. In this work, we realize novel nanoelectronic analogue and digital circuits with TBJs and planar QWTs made on In0.75Ga0.25As/InP two-dimensional electron gas (2DEG) material. First we show that a single TBJ can work as a frequency mixer or a phase detector. Second, we fabricate an integrated nanostructure containing two planar QWTs, which can be used as an RS flip-flop element. Third, we make a nanoelectronic circuit by the integration of two TBJs and two planar QWTs. This circuit shows the RS flip-flop functionalities with much larger noise margins in both high and low level inputs. All measurements in this work are done at room temperature.}},
  author       = {{Sun, Jie and Wallin, Daniel and Brusheim, Patrik and Maximov, Ivan and Xu, Hongqi}},
  booktitle    = {{Journal of Physics: Conference Series}},
  issn         = {{1742-6588}},
  language     = {{eng}},
  pages        = {{052073--052073}},
  publisher    = {{IOP Publishing}},
  title        = {{Novel room-temperature functional analogue and digital nanoelectronic circuits based on three-terminal ballistic junctions and planar quantum-wire transistors}},
  url          = {{http://dx.doi.org/10.1088/1742-6596/100/5/052073}},
  doi          = {{10.1088/1742-6596/100/5/052073}},
  volume       = {{100}},
  year         = {{2008}},
}