Direct Measure of Strain and Electronic Structure in GaAs/GaP Core-Shell Nanowires
(2010) In Nano Letters 10(3). p.880-886- Abstract
- Highly strained GaAs/GaP nanowires of excellent optical quality were grown with 50 nm diameter GaAs cores and 25 nm GaP shells. Photoluminescence from these nanowires is observed at energies dramatically shifted from the unstrained GaAs free exciton emission energy by 260 meV. Using Raman scattering, we show that it is possible to separately measure the degree of compressive and shear strain of the GaAs core and show that the Raman response of the GaP shell is consistent with tensile strain. The Raman and photoluminescence measurement are both on good agreement with 8 band k.p calculations, This result opens up new possibilities for engineering the electronic properties of the nanowires for optimal design of one-dimensional nanodevices by... (More)
- Highly strained GaAs/GaP nanowires of excellent optical quality were grown with 50 nm diameter GaAs cores and 25 nm GaP shells. Photoluminescence from these nanowires is observed at energies dramatically shifted from the unstrained GaAs free exciton emission energy by 260 meV. Using Raman scattering, we show that it is possible to separately measure the degree of compressive and shear strain of the GaAs core and show that the Raman response of the GaP shell is consistent with tensile strain. The Raman and photoluminescence measurement are both on good agreement with 8 band k.p calculations, This result opens up new possibilities for engineering the electronic properties of the nanowires for optimal design of one-dimensional nanodevices by controlling the strain of the core and shell by varying the nanowire geometry. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1589429
- author
- organization
- publishing date
- 2010
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- photoluminescence, Strained nanowires, core-shell nanowires, Raman
- in
- Nano Letters
- volume
- 10
- issue
- 3
- pages
- 880 - 886
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000275278200023
- scopus:77949476701
- pmid:20131863
- ISSN
- 1530-6992
- DOI
- 10.1021/nl903547r
- language
- English
- LU publication?
- yes
- id
- 4113da69-63af-42d6-b993-b820adfd5424 (old id 1589429)
- date added to LUP
- 2016-04-01 13:44:18
- date last changed
- 2023-11-12 20:55:22
@article{4113da69-63af-42d6-b993-b820adfd5424,
abstract = {{Highly strained GaAs/GaP nanowires of excellent optical quality were grown with 50 nm diameter GaAs cores and 25 nm GaP shells. Photoluminescence from these nanowires is observed at energies dramatically shifted from the unstrained GaAs free exciton emission energy by 260 meV. Using Raman scattering, we show that it is possible to separately measure the degree of compressive and shear strain of the GaAs core and show that the Raman response of the GaP shell is consistent with tensile strain. The Raman and photoluminescence measurement are both on good agreement with 8 band k.p calculations, This result opens up new possibilities for engineering the electronic properties of the nanowires for optimal design of one-dimensional nanodevices by controlling the strain of the core and shell by varying the nanowire geometry.}},
author = {{Montazeri, Mohammad and Fickenscher, Melodie and Smith, Leigh M. and Jackson, Howard E. and Yarrison-Rice, Jan and Kang, Jung Hyun and Gao, Qiang and Tan, H. Hoe and Jagadish, Chennupati and Guo, Yanan and Zou, Jin and Pistol, Mats-Erik and Pryor, Craig E.}},
issn = {{1530-6992}},
keywords = {{photoluminescence; Strained nanowires; core-shell nanowires; Raman}},
language = {{eng}},
number = {{3}},
pages = {{880--886}},
publisher = {{The American Chemical Society (ACS)}},
series = {{Nano Letters}},
title = {{Direct Measure of Strain and Electronic Structure in GaAs/GaP Core-Shell Nanowires}},
url = {{http://dx.doi.org/10.1021/nl903547r}},
doi = {{10.1021/nl903547r}},
volume = {{10}},
year = {{2010}},
}