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Kinetically limited composition of ternary III-V nanowires

Johansson, Jonas LU orcid and Ghasemi, Masoomeh LU (2017) In Physical Review Materials 1(4).
Abstract

Controlling the composition of ternary III-V semiconductor nanowires is of high technological importance and the current theoretical understanding is so far limited. We derive a model for the kinetically limited composition of metal-particle-seeded, ternary nanowires. The model is based on the diffusion controlled growth rate of supercritical nuclei. Applying this model to gold-seeded and self-seeded growth of InxGa1-xAs we are able to explain the experimentally observed features related to nanowire compositions, including the attainability of compositions within the miscibility gap. By directly comparing with experiments we find that 2% arsenic in the alloy particle during self-seeded growth of InGaAs nanowires is a realistic... (More)

Controlling the composition of ternary III-V semiconductor nanowires is of high technological importance and the current theoretical understanding is so far limited. We derive a model for the kinetically limited composition of metal-particle-seeded, ternary nanowires. The model is based on the diffusion controlled growth rate of supercritical nuclei. Applying this model to gold-seeded and self-seeded growth of InxGa1-xAs we are able to explain the experimentally observed features related to nanowire compositions, including the attainability of compositions within the miscibility gap. By directly comparing with experiments we find that 2% arsenic in the alloy particle during self-seeded growth of InGaAs nanowires is a realistic assumption.

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author
and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review Materials
volume
1
issue
4
article number
040401
publisher
American Physical Society
external identifiers
  • scopus:85044212990
ISSN
2475-9953
DOI
10.1103/PhysRevMaterials.1.040401
language
English
LU publication?
yes
id
159bb746-a0e4-40c9-9e48-175eca4d045e
date added to LUP
2019-05-13 09:35:50
date last changed
2025-04-04 14:38:29
@article{159bb746-a0e4-40c9-9e48-175eca4d045e,
  abstract     = {{<p>Controlling the composition of ternary III-V semiconductor nanowires is of high technological importance and the current theoretical understanding is so far limited. We derive a model for the kinetically limited composition of metal-particle-seeded, ternary nanowires. The model is based on the diffusion controlled growth rate of supercritical nuclei. Applying this model to gold-seeded and self-seeded growth of InxGa1-xAs we are able to explain the experimentally observed features related to nanowire compositions, including the attainability of compositions within the miscibility gap. By directly comparing with experiments we find that 2% arsenic in the alloy particle during self-seeded growth of InGaAs nanowires is a realistic assumption.</p>}},
  author       = {{Johansson, Jonas and Ghasemi, Masoomeh}},
  issn         = {{2475-9953}},
  language     = {{eng}},
  month        = {{09}},
  number       = {{4}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review Materials}},
  title        = {{Kinetically limited composition of ternary III-V nanowires}},
  url          = {{http://dx.doi.org/10.1103/PhysRevMaterials.1.040401}},
  doi          = {{10.1103/PhysRevMaterials.1.040401}},
  volume       = {{1}},
  year         = {{2017}},
}