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Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-kappa dielectric

Sun, Jie LU ; Larsson, Marcus LU ; Maximov, Ivan LU and Xu, Hongqi LU (2010) In Applied Physics Letters 96(16).
Abstract
A gate-defined double quantum dot with two integrated quantum point contact charge sensors is realized in an InGaAs/InP heterostructure by employing a high-kappa HfO2 thin film as gate dielectric and a polymer bridge technique. Clear honeycomb patterns are observed in the measured charge stability diagram of the double quantum dot and charge sensing signals of the quantum point contacts. It is also found that the quantum point contact charge sensors can detect the charge states in the double quantum dot even in the condition that the direct transport signal is not visible. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3409223]
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
96
issue
16
publisher
American Institute of Physics
external identifiers
  • wos:000277020600022
  • scopus:77951805865
ISSN
0003-6951
DOI
10.1063/1.3409223
language
English
LU publication?
yes
id
0aa7de5d-7dd0-41a0-b108-bc9f8be0b6e8 (old id 1601894)
date added to LUP
2010-05-19 12:02:00
date last changed
2018-06-10 03:30:56
@article{0aa7de5d-7dd0-41a0-b108-bc9f8be0b6e8,
  abstract     = {A gate-defined double quantum dot with two integrated quantum point contact charge sensors is realized in an InGaAs/InP heterostructure by employing a high-kappa HfO2 thin film as gate dielectric and a polymer bridge technique. Clear honeycomb patterns are observed in the measured charge stability diagram of the double quantum dot and charge sensing signals of the quantum point contacts. It is also found that the quantum point contact charge sensors can detect the charge states in the double quantum dot even in the condition that the direct transport signal is not visible. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3409223]},
  author       = {Sun, Jie and Larsson, Marcus and Maximov, Ivan and Xu, Hongqi},
  issn         = {0003-6951},
  language     = {eng},
  number       = {16},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-kappa dielectric},
  url          = {http://dx.doi.org/10.1063/1.3409223},
  volume       = {96},
  year         = {2010},
}