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A 90-nm CMOS +11dBm IIP3 4mW dual-band LNA for cellular handsets

Fatin, Gholamreza Zare; Koozehkanani, Z.D. and Sjöland, Henrik LU (2010) In IEEE Microwave and Wireless Components Letters 20(9). p.513-515
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
LNA, amplifiers, Low noise amplifier, CMOS, RF
in
IEEE Microwave and Wireless Components Letters
volume
20
issue
9
pages
513 - 515
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000283244300013
  • scopus:77956393671
ISSN
1531-1309
DOI
10.1109/LMWC.2010.2055839
language
English
LU publication?
yes
id
5b5dbde1-ff88-47ea-a8f5-d20da01b7edb (old id 1625448)
date added to LUP
2010-07-01 07:23:15
date last changed
2018-06-24 04:13:25
@article{5b5dbde1-ff88-47ea-a8f5-d20da01b7edb,
  author       = {Fatin, Gholamreza Zare and Koozehkanani, Z.D. and Sjöland, Henrik},
  issn         = {1531-1309},
  keyword      = {LNA,amplifiers,Low noise amplifier,CMOS,RF},
  language     = {eng},
  number       = {9},
  pages        = {513--515},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Microwave and Wireless Components Letters},
  title        = {A 90-nm CMOS +11dBm IIP3 4mW dual-band LNA for cellular handsets},
  url          = {http://dx.doi.org/10.1109/LMWC.2010.2055839},
  volume       = {20},
  year         = {2010},
}