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Energy level scheme of InAs/InxGa1-xAs/GaAs quantum-dots-in-a-well infrared photodetector structures

Hoglund, L.; Karlsson, K. F.; Holtz, P. O.; Pettersson, H.; Pistol, Mats-Erik LU ; Wang, Q.; Almqvist, S.; Asplund, C.; Malm, H. and Petrini, E., et al. (2010) In Physical Review B (Condensed Matter and Materials Physics) 82(3).
Abstract
A thorough investigation of quantum-dots-in-a-well structures for infrared photodetector applications has been performed employing different experimental techniques. The electronic structure of self-assembled InAs quantum dots embedded in an In0.15Ga0.85As/GaAs quantum well (QW) was deduced from photoluminescence (PL) and PL excitation (PLE) spectroscopy. From polarization-dependent PL it was revealed that the quantum dots hold two electron energy levels and two heavy-hole levels. Tunnel capacitance spectroscopy confirmed an electron energy level separation of about 50 meV, and additionally, that the conduction-band ground state and excited state of the dots are twofold and fourfold degenerates, respectively. Intersubband photocurrent... (More)
A thorough investigation of quantum-dots-in-a-well structures for infrared photodetector applications has been performed employing different experimental techniques. The electronic structure of self-assembled InAs quantum dots embedded in an In0.15Ga0.85As/GaAs quantum well (QW) was deduced from photoluminescence (PL) and PL excitation (PLE) spectroscopy. From polarization-dependent PL it was revealed that the quantum dots hold two electron energy levels and two heavy-hole levels. Tunnel capacitance spectroscopy confirmed an electron energy level separation of about 50 meV, and additionally, that the conduction-band ground state and excited state of the dots are twofold and fourfold degenerates, respectively. Intersubband photocurrent spectroscopy, combined with simultaneous interband pumping of the dots, revealed a dominant transition at 150 meV (8.5 mu m) between the ground state of the quantum dots and the excited state of the QW. Results from detailed full three-dimensional calculations of the electronic structure, including effects of composition intermixing and interdot interactions, confirm the experimentally unravelled energy level scheme of the dots and well. (Less)
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Physical Review B (Condensed Matter and Materials Physics)
volume
82
issue
3
publisher
American Physical Society
external identifiers
  • wos:000280208000007
  • scopus:77956689178
ISSN
1098-0121
DOI
10.1103/PhysRevB.82.035314
language
English
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yes
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340008b6-82fd-425f-963f-b8bdcc2c5209 (old id 1654822)
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2010-08-30 13:31:45
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2018-06-03 04:13:46
@article{340008b6-82fd-425f-963f-b8bdcc2c5209,
  abstract     = {A thorough investigation of quantum-dots-in-a-well structures for infrared photodetector applications has been performed employing different experimental techniques. The electronic structure of self-assembled InAs quantum dots embedded in an In0.15Ga0.85As/GaAs quantum well (QW) was deduced from photoluminescence (PL) and PL excitation (PLE) spectroscopy. From polarization-dependent PL it was revealed that the quantum dots hold two electron energy levels and two heavy-hole levels. Tunnel capacitance spectroscopy confirmed an electron energy level separation of about 50 meV, and additionally, that the conduction-band ground state and excited state of the dots are twofold and fourfold degenerates, respectively. Intersubband photocurrent spectroscopy, combined with simultaneous interband pumping of the dots, revealed a dominant transition at 150 meV (8.5 mu m) between the ground state of the quantum dots and the excited state of the QW. Results from detailed full three-dimensional calculations of the electronic structure, including effects of composition intermixing and interdot interactions, confirm the experimentally unravelled energy level scheme of the dots and well.},
  articleno    = {035314},
  author       = {Hoglund, L. and Karlsson, K. F. and Holtz, P. O. and Pettersson, H. and Pistol, Mats-Erik and Wang, Q. and Almqvist, S. and Asplund, C. and Malm, H. and Petrini, E. and Andersson, J. Y.},
  issn         = {1098-0121},
  language     = {eng},
  number       = {3},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Energy level scheme of InAs/InxGa1-xAs/GaAs quantum-dots-in-a-well infrared photodetector structures},
  url          = {http://dx.doi.org/10.1103/PhysRevB.82.035314},
  volume       = {82},
  year         = {2010},
}