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Fundamental absorption edges in heteroepitaxial YBiO3 thin films

Jenderka, Marcus ; Richter, Steffen LU ; Lorenz, Michael and Grundmann, Marius (2016) In Journal of Applied Physics 120(12).
Abstract

The dielectric function of heteroepitaxial YBiO3 grown on a-Al2O3 single crystals via pulsed laser deposition is determined in the spectral range from 0.03 eV to 4.5 eV by a simultaneous modeling of the spectroscopic ellipsometry and optical transmission data of YBiO3 films of different thicknesses. The (111)-oriented YBiO3 films are nominally unstrained and crystallize in a defective fluorite-type structure with a Fm3m space group. From the calculated absorption spectrum, a direct electronic bandgap energy of 3.6(1) eV and the signature of an indirect electronic transition around 0.5 eV are obtained. These values provide necessary experimental feedback to previous conflicting... (More)

The dielectric function of heteroepitaxial YBiO3 grown on a-Al2O3 single crystals via pulsed laser deposition is determined in the spectral range from 0.03 eV to 4.5 eV by a simultaneous modeling of the spectroscopic ellipsometry and optical transmission data of YBiO3 films of different thicknesses. The (111)-oriented YBiO3 films are nominally unstrained and crystallize in a defective fluorite-type structure with a Fm3m space group. From the calculated absorption spectrum, a direct electronic bandgap energy of 3.6(1) eV and the signature of an indirect electronic transition around 0.5 eV are obtained. These values provide necessary experimental feedback to previous conflicting electronic band structure calculations predicting either a topologically trivial or a non-trivial insulating ground state in YBiO3.

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author
; ; and
publishing date
type
Contribution to journal
publication status
published
in
Journal of Applied Physics
volume
120
issue
12
article number
125702
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:84988883157
ISSN
0021-8979
DOI
10.1063/1.4962975
language
English
LU publication?
no
additional info
Publisher Copyright: © 2016 Author(s).
id
1661b9aa-b9b3-4b1b-a9b1-b9c3ec532303
date added to LUP
2022-04-19 14:51:46
date last changed
2022-04-25 16:18:48
@article{1661b9aa-b9b3-4b1b-a9b1-b9c3ec532303,
  abstract     = {{<p>The dielectric function of heteroepitaxial YBiO<sub>3</sub> grown on a-Al<sub>2</sub>O<sub>3</sub> single crystals via pulsed laser deposition is determined in the spectral range from 0.03 eV to 4.5 eV by a simultaneous modeling of the spectroscopic ellipsometry and optical transmission data of YBiO<sub>3</sub> films of different thicknesses. The (111)-oriented YBiO<sub>3</sub> films are nominally unstrained and crystallize in a defective fluorite-type structure with a Fm3m space group. From the calculated absorption spectrum, a direct electronic bandgap energy of 3.6(1) eV and the signature of an indirect electronic transition around 0.5 eV are obtained. These values provide necessary experimental feedback to previous conflicting electronic band structure calculations predicting either a topologically trivial or a non-trivial insulating ground state in YBiO<sub>3</sub>.</p>}},
  author       = {{Jenderka, Marcus and Richter, Steffen and Lorenz, Michael and Grundmann, Marius}},
  issn         = {{0021-8979}},
  language     = {{eng}},
  month        = {{09}},
  number       = {{12}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Journal of Applied Physics}},
  title        = {{Fundamental absorption edges in heteroepitaxial YBiO<sub>3</sub> thin films}},
  url          = {{http://dx.doi.org/10.1063/1.4962975}},
  doi          = {{10.1063/1.4962975}},
  volume       = {{120}},
  year         = {{2016}},
}