Fundamental absorption edges in heteroepitaxial YBiO3 thin films
(2016) In Journal of Applied Physics 120(12).- Abstract
The dielectric function of heteroepitaxial YBiO3 grown on a-Al2O3 single crystals via pulsed laser deposition is determined in the spectral range from 0.03 eV to 4.5 eV by a simultaneous modeling of the spectroscopic ellipsometry and optical transmission data of YBiO3 films of different thicknesses. The (111)-oriented YBiO3 films are nominally unstrained and crystallize in a defective fluorite-type structure with a Fm3m space group. From the calculated absorption spectrum, a direct electronic bandgap energy of 3.6(1) eV and the signature of an indirect electronic transition around 0.5 eV are obtained. These values provide necessary experimental feedback to previous conflicting... (More)
The dielectric function of heteroepitaxial YBiO3 grown on a-Al2O3 single crystals via pulsed laser deposition is determined in the spectral range from 0.03 eV to 4.5 eV by a simultaneous modeling of the spectroscopic ellipsometry and optical transmission data of YBiO3 films of different thicknesses. The (111)-oriented YBiO3 films are nominally unstrained and crystallize in a defective fluorite-type structure with a Fm3m space group. From the calculated absorption spectrum, a direct electronic bandgap energy of 3.6(1) eV and the signature of an indirect electronic transition around 0.5 eV are obtained. These values provide necessary experimental feedback to previous conflicting electronic band structure calculations predicting either a topologically trivial or a non-trivial insulating ground state in YBiO3.
(Less)
- author
- Jenderka, Marcus ; Richter, Steffen LU ; Lorenz, Michael and Grundmann, Marius
- publishing date
- 2016-09-28
- type
- Contribution to journal
- publication status
- published
- in
- Journal of Applied Physics
- volume
- 120
- issue
- 12
- article number
- 125702
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:84988883157
- ISSN
- 0021-8979
- DOI
- 10.1063/1.4962975
- language
- English
- LU publication?
- no
- additional info
- Publisher Copyright: © 2016 Author(s).
- id
- 1661b9aa-b9b3-4b1b-a9b1-b9c3ec532303
- date added to LUP
- 2022-04-19 14:51:46
- date last changed
- 2022-04-25 16:18:48
@article{1661b9aa-b9b3-4b1b-a9b1-b9c3ec532303, abstract = {{<p>The dielectric function of heteroepitaxial YBiO<sub>3</sub> grown on a-Al<sub>2</sub>O<sub>3</sub> single crystals via pulsed laser deposition is determined in the spectral range from 0.03 eV to 4.5 eV by a simultaneous modeling of the spectroscopic ellipsometry and optical transmission data of YBiO<sub>3</sub> films of different thicknesses. The (111)-oriented YBiO<sub>3</sub> films are nominally unstrained and crystallize in a defective fluorite-type structure with a Fm3m space group. From the calculated absorption spectrum, a direct electronic bandgap energy of 3.6(1) eV and the signature of an indirect electronic transition around 0.5 eV are obtained. These values provide necessary experimental feedback to previous conflicting electronic band structure calculations predicting either a topologically trivial or a non-trivial insulating ground state in YBiO<sub>3</sub>.</p>}}, author = {{Jenderka, Marcus and Richter, Steffen and Lorenz, Michael and Grundmann, Marius}}, issn = {{0021-8979}}, language = {{eng}}, month = {{09}}, number = {{12}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Journal of Applied Physics}}, title = {{Fundamental absorption edges in heteroepitaxial YBiO<sub>3</sub> thin films}}, url = {{http://dx.doi.org/10.1063/1.4962975}}, doi = {{10.1063/1.4962975}}, volume = {{120}}, year = {{2016}}, }